Fast Rectifiers. FEP16AT Datasheet

FEP16AT Rectifiers. Datasheet pdf. Equivalent

Part FEP16AT
Description (FEP16AT - FEP16JT) Glass Passivated Super Fast Rectifiers
Feature FEP16AT - FEP16JT Discrete POWER & Signal Technologies FEP16AT - FEP16JT Features • • • • Low forw.
Manufacture Fairchild Semiconductor
Datasheet
Download FEP16AT Datasheet




FEP16AT
Discrete POWER & Signal
Technologies
FEP16AT - FEP16JT
Features
Low forward voltage drop.
High surge current capacity.
High current capability.
High reliability.
TO-220AB
Dimensions are in: inches (mm)
PIN 1
+
PIN 3
Positive CT
CASE
PIN 2
PIN 1
-
PIN 3
CASE
PIN 2
Negative CT
Suffix “A”
PIN 1
AC
PIN 3
Doubler
CASE
PIN 2
Suffix “D”
0 .1 13 ( 2. 87 )
0 .1 03 ( 2. 62 )
0 .4 12 ( 10 .5 )
MAX
0 .1 54 ( 3. 91 )
0 .1 48 ( 3. 74 )
0.27(6.86)
0.23(5.84)
0 .5 94 ( 15 .1 )
0 .5 87 ( 14 .9 )
0.185(4.70)
0.175(4.44)
0.055(1.40)
0.045(1.14)
0 .1 6( 4 .0 6)
0 .1 4( 3 .5 6)
12 3
0 .5 6( 1 4. 22 )
0 .5 3( 1 3. 46 )
0 .0 37 ( 0. 94 )
0 .0 27 ( 0. 68 )
0 .1 05 ( 2. 67 )
0 .0 95 ( 2. 41 )
0.11(2.79)
0.10(2.54)
0.025(0.64)
0.014(0.35)
16 Ampere Glass Passivated Super Fast Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
IO
if(surge)
PD
RθJA
RθJL
Tstg
TJ
Average Rectified Current
.375 " lead length @ TA = 100°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
16
200
8.33
66
15
2.2
-65 to +150
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Blocking Voltage (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 100°C
Maximum Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
Maximum Forward Voltage @ 8.0A
16AT
50
35
50
Typical Junction Capacitance
VR = 4.0. f = 1.0 MHz
16BT
100
70
100
Device
16CT 16DT 16FT 16GT 16HT
150 200 300 400 500
105 140 210 280 350
150 200 300 400 500
16JT
600
420
600
10
500
35 50
0.95
85
1.3 1.5
60
Units
V
V
V
µA
µA
nS
V
pF
©1999 Fairchild Semiconductor Corporation
FEP16AT - FEP16JT, Rev. A
Free Datasheet http://www.datasheet4u.com/



FEP16AT
Typical Characteristics
Forward Current Derating Curve
20
16
12
SINGLE PHASE
HALF WAVE
8 60HZ
RESISTIVE OR
INDUCTIVE LOAD
4 .375" (9.0mm) LEAD
LENGTHS
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE (º C)
175
Forward Characteristics
100
FEP16AT-FEP16DT
10
FEP16FT -FEP16 JT
1
Non-Repetitive Surge Current
200
160
120
80
40
0
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
Reverse Characteristics
1000
100
TA = 100ºC
10
0.1
0.01
0.4
TA = 25ºC
Pulse Width = 300µs
2% Duty Cycle
0.6 0.8 1 1.2 1.4 1.6
FORWARD VOLTAGE (V)
1.8
1
TA= 25ºC
0.1
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Junction Capacitance
100
90
80
70
60 FEP16AT-FEP16DT
50 FEP16FT-FEP16JT
40
12
5 10 20
50 100
REVERSE VOLTAGE (V)
50
NONINDUCTIVE
50
NONINDUCTIVE
+0.5A
trr
DUT
50V
(approx)
50
NONINDUCTIVE
(-)
Pulse
Generator
(Note 2)
OSCILLOSCOPE
(Note 1)
(+)
0
-0.25A
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
FEP16AT - FEP16JT, Rev. A
Free Datasheet http://www.datasheet4u.com/







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