Bridge Rectifiers. FEP16BTD Datasheet

FEP16BTD Rectifiers. Datasheet pdf. Equivalent

Part FEP16BTD
Description (FEP16A - FEP16J) 16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers
Feature FEP16A thru FEP16J ® Pb Free Plating Product FEP16A thru FEP16J TO-220AB .419(10.66) .387(9.85) ..
Manufacture Thinki Semiconductor
Datasheet
Download FEP16BTD Datasheet

FEP16A thru FEP16J ® Pb Free Plating Product FEP16A thru FEP16BTD Datasheet
Recommendation Recommendation Datasheet FEP16BTD Datasheet





FEP16BTD
FEP16A thru FEP16J
®
FEP16A thru FEP16J
Pb
Pb Free Plating Product
16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers
Features
Glass passivated chip junction
Fast switching for high efficiency
Low forward voltage drop and High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS|Inverter
Car Amplifier and Sound Device System etc..
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:As marked on body
Mounting position: Any
Weight: 2.03 grams
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive CT
Common Cathode
Suffix "T"
Case
Negative CT
Common Anode
Suffix "TA"
Case
Doubler
Series Connection
Suffix "TD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "T"
Common Anode Suffix "TA"
Anode and Cathode Coexistence Suffix "TD"
Maximum Recurrent Peak Reverse Voltage
FEP16AT FEP16BT FEP16DT FEP16FT FEP16GT FEP16JT
SYMBOL FEP16ATA FEP16BTA FEP16DTA FEP16FTA FEP16GTA FEP16JTA UNIT
FEP16ATD FEP16BTD FEP16DTD FEP16FTD FEP16GTD FEP16JTD
VRRM
50
100 200 300 400 600 V
Maximum RMS Voltage
VRMS
35
70 140 210 280 420 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
16.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98 1.3
10.0
250
35
90
2.2
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
A
1.7 V
uA
uA
nS
pF
oCW
oC
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/



FEP16BTD
FEP16A thru FEP16J
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
0
0 50
100
CASE TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
FEP16A-FEP16D
FEP16F-FEP16G
1.0
FEP16J
0.1
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
200
175
150
125
100
75
50
25
0
1
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
TJ=25oC
1
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/





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