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FEP16DTA Dataheets PDF



Part Number FEP16DTA
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (FEP16A - FEP16J) 16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers
Datasheet FEP16DTA DatasheetFEP16DTA Datasheet (PDF)

FEP16A thru FEP16J ® Pb Free Plating Product FEP16A thru FEP16J TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN Pb 16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers Features Glass passivated chip junction Fast switching for high efficiency Low forward voltage drop and High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data.

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FEP16A thru FEP16J ® Pb Free Plating Product FEP16A thru FEP16J TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN Pb 16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers Features Glass passivated chip junction Fast switching for high efficiency Low forward voltage drop and High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:As marked on body Mounting position: Any Weight: 2.03 grams .038(0.96) .019(0.50) .177(4.5)MAX Automotive Environment|DC Motor Control Plating Power Supply|UPS|Inverter Car Amplifier and Sound Device System etc.. .548(13.93) .025(0.65)MAX .1(2.54) .1(2.54) Case Case Case Positive CT Common Cathode Suffix "T" Negative CT Common Anode Suffix "TA" Doubler Series Connection Suffix "TD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Suffix "T" Common Anode Suffix "TA" Anode and Cathode Coexistence Suffix "TD" FEP16AT FEP16BT FEP16DT FEP16FT FEP16GT FEP16JT SYMBOL FEP16ATA FEP16BTA FEP16DTA FEP16FTA FEP16GTA FEP16JTA UNIT FEP16ATD FEP16BTD FEP16DTD FEP16FTD FEP16GTD FEP16JTD Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range o o o VRRM VRMS VDC IF(AV) 50 35 50 100 70 100 200 140 200 16.0 300 210 300 400 280 400 600 420 600 V V V A IFSM 175 150 A VF 0.98 10.0 250 35 90 2.2 -55 to + 150 1.3 1.7 V uA uA nS pF o IR Trr CJ R JC TJ, TSTG CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ FEP16A thru FEP16J ® FIG.1 - FORWARD CURRENT DERATING CURVE 16 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 13 175 150 125 100 75 50 25 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 10 8 6 4 60 Hz Resistive or Inductive load 0 0 50 100 o 150 1 10 100 CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 FEP16A-FEP16D INSTANTANEOUS REVERSE CURRENT, MICROAMPERES FEP16F-FEP16G 100 TJ=125 C o 1.0 FEP16J 10 TJ=25 C 1 o 0.1 0.01 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6 o 0.1 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE, pF TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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