Document
FEP16A thru FEP16J
®
Pb Free Plating Product
FEP16A thru FEP16J
TO-220AB
.419(10.66) .387(9.85) .139(3.55) MIN
Pb
16.0 Ampere Fast Efficient Plastic Half Bridge Rectifiers
Features Glass passivated chip junction Fast switching for high efficiency Low forward voltage drop and High current capability Low reverse leakage current High surge current capability
Application
Unit : inch (mm)
.196(5.00) .163(4.16) .054(1.39) .045(1.15)
.269(6.85) .226(5.75)
.624(15.87) .50(12.7)MIN
Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:As marked on body Mounting position: Any Weight: 2.03 grams
.038(0.96) .019(0.50)
.177(4.5)MAX
Automotive Environment|DC Motor Control Plating Power Supply|UPS|Inverter Car Amplifier and Sound Device System etc..
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive CT Common Cathode Suffix "T"
Negative CT Common Anode Suffix "TA"
Doubler Series Connection Suffix "TD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Common Cathode Suffix "T" Common Anode Suffix "TA" Anode and Cathode Coexistence Suffix "TD"
FEP16AT FEP16BT FEP16DT FEP16FT FEP16GT FEP16JT
SYMBOL FEP16ATA FEP16BTA FEP16DTA FEP16FTA FEP16GTA FEP16JTA UNIT
FEP16ATD FEP16BTD FEP16DTD FEP16FTD FEP16GTD FEP16JTD
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range
o o o
VRRM VRMS VDC IF(AV)
50 35 50
100 70 100
200 140 200 16.0
300 210 300
400 280 400
600 420 600
V V V A
IFSM
175
150
A
VF
0.98 10.0 250 35 90 2.2 -55 to + 150
1.3
1.7
V uA uA nS pF
o
IR Trr CJ R JC TJ, TSTG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
FEP16A thru FEP16J
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
200
PEAK FORWARD SURGE CURRENT, AMPERES
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
13
175 150 125 100 75 50 25 0
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
10
8
6
4 60 Hz Resistive or Inductive load 0 0 50 100
o
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
.