L2SA1576AQT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon z We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device L2SA1576AQLT1G Series L2SA1576AQLT3G Series Package SC-70 SC-70 Shipping 3000/Tape & Reel 10000/Tape & Reel 1 2 SC-70/SOT– 323 L2SA1576AQT1G Series 3 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Collector power dissipation Junction temperature Storage temperature Symbol V CEO V CBO V EBO Value –50 –60 –6.0 –150 0.15 150 -55 ~+150 Unit V V V mAdc W °C °C 1 BASE 3 COLLECTOR IC PC Tj T stg 2 EMITTER DEVICE MARKING L2SA1576AQT1G =FQ L2SA1576ART1G=FR L2SA1576AST1G =FS ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Collector–Emitter Breakdown Voltage (IC = –1 mA) Emitter–Base Breakdown Voltage (IE = – 50 µA) Collector–Base Breakdown Voltage (IC = – 50 µA) Collector Cutoff Current (VCB = – 60 V) Emitter cutoff current (VEB = – 6 V) Collector-emitter saturation voltage (IC/ IB = – 50 mA / – 5m A) DC current transfer ratio (V CE = – 6 V, I C= –1mA) Transition frequency (V CE = – 12 V, I E= 2mA, f=30MHz ) Output capacitance (V CB = – 12 V, I E= 0A, f =1MHz ) Symbol V (BR)CEO Min – 50 –6 – 60 — — — 120 — — Typ — — — — — — –– 140 4.0 Max — — — – 0.1 – 0.1 -0.5 560 –– 5.0 Unit V V V µA µA V –– MHz pF V (BR)EBO V (BR)CBO I CBO I EBO V CE(sat) h FE fT C ob h FE values are classified as follows: hF...