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MUR2010GD Dataheets PDF



Part Number MUR2010GD
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (MUR2005 - MUR2060) 20.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Datasheet MUR2010GD DatasheetMUR2010GD Datasheet (PDF)

MUR2005 thru MUR2060 ® Pb Pb Free Plating Product MUR2005 thru MUR2060 TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN 20.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data Case: Molded plastic .

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MUR2005 thru MUR2060 ® Pb Pb Free Plating Product MUR2005 thru MUR2060 TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN 20.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:As marked on diode body Mounting position: Any Weight: 2.03 grams .038(0.96) .019(0.50) .177(4.5)MAX Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc.. .548(13.93) .025(0.65)MAX .1(2.54) .1(2.54) Case Case Case Positive Common Cathode Suffix "CT" Negative Common Anode Suffix "CA" Doubler Series Connection Suffix "GD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL VRRM VRMS VDC IF(AV) Common Cathode Suffix "CT" Common Anode Suffix "CA" Anode and Cathode Coexistence Suffix "GD" MUR2005CT MUR2010CT MUR2020CT MUR2030CT MUR2040CT MUR2060CT MUR2005CA MUR2010CA MUR2020CA MUR2030CA MUR2040CA MUR2060CA UNIT MUR2005GD MUR2010GD MUR2020GD MUR2030GDMUR2040GD MUR2060GD Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 10.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200 20.0 300 210 300 400 280 400 600 420 600 V V V A IFSM 200 175 A VF IR Trr CJ TJ, TSTG 0.975 10.0 250 35 120 -55 to +150 1.3 1.5 V uA uA nS 70 pF o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ MUR2005 thru MUR2060 ® FIG.1 - FORWARD CURRENT DERATING CURVE 20 200 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 16 175 150 125 100 75 50 25 0 10 8 6 4 60 Hz Resistive or Inductive load 0 0 50 100 o 150 1 10 100 CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 MUR2005-MUR2020 MUR2030-MUR2040 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 100 TJ=125 C o 1.0 MUR2060 0.1 10 TJ=25 C 1 o 0.01 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6 o 0.1 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE, pF TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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