Document
MUR2005 thru MUR2060
®
Pb
Pb Free Plating Product
MUR2005 thru MUR2060
TO-220AB
.419(10.66) .387(9.85) .139(3.55) MIN
20.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability
Application
Unit : inch (mm)
.196(5.00) .163(4.16) .054(1.39) .045(1.15)
.269(6.85) .226(5.75)
.624(15.87) .50(12.7)MIN
Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:As marked on diode body Mounting position: Any Weight: 2.03 grams
.038(0.96) .019(0.50)
.177(4.5)MAX
Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc..
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Case
Case
Case
Positive Common Cathode Suffix "CT"
Negative Common Anode Suffix "CA"
Doubler Series Connection Suffix "GD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
SYMBOL VRRM VRMS VDC IF(AV)
Common Cathode Suffix "CT" Common Anode Suffix "CA" Anode and Cathode Coexistence Suffix "GD"
MUR2005CT MUR2010CT MUR2020CT MUR2030CT MUR2040CT MUR2060CT
MUR2005CA MUR2010CA MUR2020CA MUR2030CA MUR2040CA MUR2060CA UNIT MUR2005GD MUR2010GD MUR2020GD MUR2030GDMUR2040GD MUR2060GD
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=125 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 10.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2)
Operating Junction and Storage Temperature Range
o o o
50 35 50
100 70 100
200 140 200 20.0
300 210 300
400 280 400
600 420 600
V V V A
IFSM
200
175
A
VF IR Trr CJ
TJ, TSTG
0.975 10.0 250 35 120
-55 to +150
1.3
1.5
V uA uA nS
70
pF
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
MUR2005 thru MUR2060
®
FIG.1 - FORWARD CURRENT DERATING CURVE
20 200
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, AMPERES
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
16
175 150 125 100 75 50 25 0
10
8
6
4 60 Hz Resistive or Inductive load 0 0 50 100
o
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT, AMPERES
10 MUR2005-MUR2020 MUR2030-MUR2040
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
100
TJ=125 C
o
1.0
MUR2060 0.1
10 TJ=25 C 1
o
0.01 0.2 0.4 0.6 0.8
TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6
o
0.1 0 20 40 60 80 100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p
o
100
10 0.1 1.0 4.0 10 100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.