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U16C40D Dataheets PDF



Part Number U16C40D
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description (U16C05 - U16C60) 16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Datasheet U16C40D DatasheetU16C40D Datasheet (PDF)

U16C05 thru U16C60 ® Pb Free Plating Product U16C05 thru U16C60 TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN Pb 16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data Case: Molded plastic TO-.

  U16C40D   U16C40D



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U16C05 thru U16C60 ® Pb Free Plating Product U16C05 thru U16C60 TO-220AB .419(10.66) .387(9.85) .139(3.55) MIN Pb 16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .196(5.00) .163(4.16) .054(1.39) .045(1.15) .269(6.85) .226(5.75) .624(15.87) .50(12.7)MIN Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:Color band denotes cathode Mounting position: Any Weight: 2.03 grams .038(0.96) .019(0.50) .177(4.5)MAX Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc.. .548(13.93) .025(0.65)MAX .1(2.54) .1(2.54) Positive Suffix "C" Negative Suffix "A" Doubler/Series Connection Suffix "D" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Suffix "C" Common Anode Suffix "A" Anode and Cathode Coexistence Suffix "D" SYMBOL VRRM VRMS VDC IF(AV) U16C05C U16C05A U16C05D U16C10C U16C10A U16C10D U16C20C U16C20A U16C20D U16C30C U16C30A U16C30D U16C40C U16C40A U16C40D U16C60C U16C60A U16C60D UNIT V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200 16.0 300 210 300 400 280 400 600 420 600 IFSM 175 150 A VF 0.98 10.0 250 35 90 2.2 -55 to + 150 1.3 1.7 V uA uA nS pF o IR Trr CJ R JC TJ, TSTG CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ U16C05 thru U16C60 ® FIG.1 - FORWARD CURRENT DERATING CURVE 16 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 13 175 150 125 100 75 50 25 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 10 8 6 4 60 Hz Resistive or Inductive load 0 0 50 100 o 150 1 10 100 CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 U16C05-U16C20 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES U16C30-U16C40 100 TJ=125 C o 1.0 U16C60 10 TJ=25 C 1 o 0.1 0.01 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6 o 0.1 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE, pF TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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