Document
U16C05 thru U16C60
®
Pb Free Plating Product
U16C05 thru U16C60
TO-220AB
.419(10.66) .387(9.85) .139(3.55) MIN
Pb
16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability
Application
Unit : inch (mm)
.196(5.00) .163(4.16) .054(1.39) .045(1.15)
.269(6.85) .226(5.75)
.624(15.87) .50(12.7)MIN
Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:Color band denotes cathode Mounting position: Any Weight: 2.03 grams
.038(0.96) .019(0.50)
.177(4.5)MAX
Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc..
.548(13.93)
.025(0.65)MAX
.1(2.54)
.1(2.54)
Positive Suffix "C"
Negative Suffix "A"
Doubler/Series Connection Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Common Cathode Suffix "C" Common Anode Suffix "A" Anode and Cathode Coexistence Suffix "D"
SYMBOL VRRM VRMS VDC IF(AV)
U16C05C U16C05A U16C05D
U16C10C U16C10A U16C10D
U16C20C U16C20A U16C20D
U16C30C U16C30A U16C30D
U16C40C U16C40A U16C40D
U16C60C U16C60A U16C60D
UNIT V V V A
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range
o o o
50 35 50
100 70 100
200 140 200 16.0
300 210 300
400 280 400
600 420 600
IFSM
175
150
A
VF
0.98 10.0 250 35 90 2.2 -55 to + 150
1.3
1.7
V uA uA nS pF
o
IR Trr CJ R JC TJ, TSTG
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
U16C05 thru U16C60
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
200
PEAK FORWARD SURGE CURRENT, AMPERES
AVERAGE FORWARD RECTIFIED CURRENT, AMPERES
13
175 150 125 100 75 50 25 0
Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method)
10
8
6
4 60 Hz Resistive or Inductive load 0 0 50 100
o
150
1
10
100
CASE TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT, AMPERES
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
U16C05-U16C20
INSTANTANEOUS REVERSE CURRENT, MICROAMPERES
U16C30-U16C40
100
TJ=125 C
o
1.0
U16C60
10 TJ=25 C 1
o
0.1
0.01 0.2 0.4 0.6 0.8
TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6
o
0.1 0 20 40 60 80 100
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p
o
100
10 0.1 1.0 4.0 10 100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.