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URF1660C Dataheets PDF



Part Number URF1660C
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description Ultrafast Recovery Rectifiers
Datasheet URF1660C DatasheetURF1660C Datasheet (PDF)

URF1605 thru URF1660 ® Pb Pb Free Plating Product URF1605 thru URF1660 ITO-220AB .112(2.85) .100(2.55) .406(10.3) .381(9.7) .134(3.4) .118(3.0) 16.0 Amp.Isolated Glass Passivated Junction Ultrafast Recovery Rectifiers Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .189(4.8) .165(4.2) .130(3.3) .114(2.9) .272(6.9) .248(6.3) .606(15.4) .583(14.8) Mechanical Dat.

  URF1660C   URF1660C



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URF1605 thru URF1660 ® Pb Pb Free Plating Product URF1605 thru URF1660 ITO-220AB .112(2.85) .100(2.55) .406(10.3) .381(9.7) .134(3.4) .118(3.0) 16.0 Amp.Isolated Glass Passivated Junction Ultrafast Recovery Rectifiers Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Unit : inch (mm) .189(4.8) .165(4.2) .130(3.3) .114(2.9) .272(6.9) .248(6.3) .606(15.4) .583(14.8) Mechanical Data Case: Molded plastic Isolated/Insulated ITO-220AB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:Color band denotes cathode Mounting position: Any Weight: 2.03 grams .055(1.4) .039(1.0) .035(0.9) .011(0.3) .1 (2.55) .1 (2.55) .161(4.1)MAX .543(13.8) .512(13.0) Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc.. .071(1.8) .055(1.4) .114(2.9) .098(2.5) .032(.8) MAX Positive Suffix "C" Negative Suffix "A" Doubler/Series Connection Suffix "D" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Suffix "C" Common Anode Suffix "A" Anode and Cathode Coexistence Suffix "D" URF1605C URF1610C URF1610A URF1610D URF1620C URF1620A URF1620D URF1630C URF1630A URF1630D URF1640C URF1640A URF1640D URF1660C URF1660A URF1660D SYMBOL VRRM VRMS VDC IF(AV) URF1605A URF1605D UNIT V V V A Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TC=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=125 C Maximum Reverse Recovery Time (Note 1) Typical junction Capacitance (Note 2) Typical Thermal Resistance (Note 3) Operating Junction and Storage Temperature Range o o o 50 35 50 100 70 100 200 140 200 16.0 300 210 300 400 280 400 600 420 600 IFSM 175 150 A VF 0.98 10.0 250 35 90 2.2 -55 to + 150 1.3 1.7 V uA uA nS pF o IR Trr CJ R JC TJ, TSTG CW o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, I R = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ URF1605 thru URF1660 ® FIG.1 - FORWARD CURRENT DERATING CURVE 16 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 13 175 150 125 100 75 50 25 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 10 8 6 4 60 Hz Resistive or Inductive load 0 0 50 100 o 150 1 10 100 CASE TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 URF1605-URF1620 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 1000 URF1630-URF1640 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES 100 TJ=125 C o 1.0 URF1660 10 TJ=25 C 1 o 0.1 0.01 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 1.0 1.2 1.4 1.6 o 0.1 0 20 40 60 80 100 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 JUNCTION CAPACITANCE, pF TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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