High Voltage Silicon Diode
BY127 thru BY133
®
Pb
Pb Free Plating Product
BY127 thru BY133
1.0 Ampere DO-41 Package High Voltage Silicon Diode
DO...
Description
BY127 thru BY133
®
Pb
Pb Free Plating Product
BY127 thru BY133
1.0 Ampere DO-41 Package High Voltage Silicon Diode
DO-41
Unit: inch(mm)
Features
Low forward voltage drop High current capability High surge current capability
.034(.86)
Case: Molded plastic, DO-41 Epoxy: UL 94V-0 rate flame retardant Lead: Axial leads, solderable per MIL-STD-202 method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any
.205(5.2) .160(4.1)
Mechanical Data
1.0(25.4)MIN.
.028(.71)
.107(2.7)
1.0(25.4)MIN.
.080(2.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive) load. For capacitive load,derate by 20%)
Symbols
Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Macimum average forward rectified current 0.375"(9.5mm)lead length at TA=75 Peak forward surge current 8.3ms sing-wave superimposed on rated load (JEDEC method)TA=75 Maximum instantaneous forward voltage at 1.0 A Maximum reverse current at rated DC blocking voltage Typeical thermal resistance(Note 2) Typical junction Capacitance(Note 1) Operating and storage temperature range TA=25 TA=100 VF IR IFSM VRRM VRMS VDC I(AV)
BY127
1250 875 1250
BY133
1300 930 1300 1.0
EM513
1600 1120 1600
EM516
1800 1270 1800
Units
Volts Volts Volts Amp
30.0
Amps
1.1 5.0
Volts A
200.0
R R
CJ
TJ
JA JL
50.0 /W 25.0 15.0 -50 to +150 pF
TSTG
Notes: ...
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