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BY127

Thinki Semiconductor

High Voltage Silicon Diode

BY127 thru BY133 ® Pb Pb Free Plating Product BY127 thru BY133 1.0 Ampere DO-41 Package High Voltage Silicon Diode DO...


Thinki Semiconductor

BY127

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BY127 thru BY133 ® Pb Pb Free Plating Product BY127 thru BY133 1.0 Ampere DO-41 Package High Voltage Silicon Diode DO-41 Unit: inch(mm) Features Low forward voltage drop High current capability High surge current capability .034(.86) Case: Molded plastic, DO-41 Epoxy: UL 94V-0 rate flame retardant Lead: Axial leads, solderable per MIL-STD-202 method 208 guaranteed Polarity: Color band denotes cathode end Mounting position: Any .205(5.2) .160(4.1) Mechanical Data 1.0(25.4)MIN. .028(.71) .107(2.7) 1.0(25.4)MIN. .080(2.0) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ratings at 25 ambient temperature unless otherwise specified,Single phase,half wave 60Hz,resistive or inductive) load. For capacitive load,derate by 20%) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Macimum average forward rectified current 0.375"(9.5mm)lead length at TA=75 Peak forward surge current 8.3ms sing-wave superimposed on rated load (JEDEC method)TA=75 Maximum instantaneous forward voltage at 1.0 A Maximum reverse current at rated DC blocking voltage Typeical thermal resistance(Note 2) Typical junction Capacitance(Note 1) Operating and storage temperature range TA=25 TA=100 VF IR IFSM VRRM VRMS VDC I(AV) BY127 1250 875 1250 BY133 1300 930 1300 1.0 EM513 1600 1120 1600 EM516 1800 1270 1800 Units Volts Volts Volts Amp 30.0 Amps 1.1 5.0 Volts A 200.0 R R CJ TJ JA JL 50.0 /W 25.0 15.0 -50 to +150 pF TSTG Notes: ...




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