High Voltage Silicon Diode
EM513 thru EM518
®
Pb
Pb Free Plating Product
EM513 thru EM518
1.0 Ampere DO-41 Package High Voltage Silicon Diode
D...
Description
EM513 thru EM518
®
Pb
Pb Free Plating Product
EM513 thru EM518
1.0 Ampere DO-41 Package High Voltage Silicon Diode
DO-41
Unit: inch(mm)
Features
Low leakage Low forward voltage drop High current capability
.205(5.2) .160(4.1) 1.0(25.4)MIN.
Low cost
.034(.86) .028(.71)
Mechanical Data
Case: Molded plastic, DO-41 Mounting Position: Any Terminals: Axial leads, solderable per MIL-STD-202
.107(2.7)
1.0(25.4)MIN.
.080(2.0)
Absolute Maximum Ratings (Ta = 25oC)
Symbols
Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current , .375”(9.5mm) lead length TA =75℃ Peak forward surge current , 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at IF = 1.0A DC TJ = 25oC Maximum leakage current at TA = 25 OC at rated DC blocking voltage at TA = 100OC Typical junction capacitance (Note 1) Typical thermal resistance (Note 2) Operating and storage temperature range VRRM VRMS VDC IFAV EM 513 1600 1120 1600 EM 516 1800 1260 1800 1 30 EM 518 2000 1400 2000
Units
V V V A
IFSM
A
VF IR CJ RthA TJ ,TS
1.1 5 500 15 50 -55 to +150
V µA µA pF
℃/W
℃
Note : 1. Measured at 1MHz and applied reverse voltage of 4.0VDC. 2. Thermal resistance junction to ambient 0.375”(9.5mm) lead length P.C.B. mounted.
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EM513 thru EM518
®
FIG.2-TYPICAL FORWARD ...
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