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EM516 Dataheets PDF



Part Number EM516
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description High Voltage Silicon Diode
Datasheet EM516 DatasheetEM516 Datasheet (PDF)

EM513 thru EM518 ® Pb Pb Free Plating Product EM513 thru EM518 1.0 Ampere DO-41 Package High Voltage Silicon Diode DO-41 Unit: inch(mm) Features • • • Low leakage Low forward voltage drop High current capability .205(5.2) .160(4.1) 1.0(25.4)MIN. • Low cost .034(.86) .028(.71) Mechanical Data • • • Case: Molded plastic, DO-41 Mounting Position: Any Terminals: Axial leads, solderable per MIL-STD-202 .107(2.7) 1.0(25.4)MIN. .080(2.0) Absolute Maximum Ratings (Ta = 25oC) Symbols Maximu.

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EM513 thru EM518 ® Pb Pb Free Plating Product EM513 thru EM518 1.0 Ampere DO-41 Package High Voltage Silicon Diode DO-41 Unit: inch(mm) Features • • • Low leakage Low forward voltage drop High current capability .205(5.2) .160(4.1) 1.0(25.4)MIN. • Low cost .034(.86) .028(.71) Mechanical Data • • • Case: Molded plastic, DO-41 Mounting Position: Any Terminals: Axial leads, solderable per MIL-STD-202 .107(2.7) 1.0(25.4)MIN. .080(2.0) Absolute Maximum Ratings (Ta = 25oC) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current , .375”(9.5mm) lead length TA =75℃ Peak forward surge current , 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at IF = 1.0A DC TJ = 25oC Maximum leakage current at TA = 25 OC at rated DC blocking voltage at TA = 100OC Typical junction capacitance (Note 1) Typical thermal resistance (Note 2) Operating and storage temperature range VRRM VRMS VDC IFAV EM 513 1600 1120 1600 EM 516 1800 1260 1800 1 30 EM 518 2000 1400 2000 Units V V V A IFSM A VF IR CJ RthA TJ ,TS 1.1 5 500 15 50 -55 to +150 V µA µA pF ℃/W ℃ Note : 1. Measured at 1MHz and applied reverse voltage of 4.0VDC. 2. Thermal resistance junction to ambient 0.375”(9.5mm) lead length P.C.B. mounted. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ EM513 thru EM518 ® FIG.2-TYPICAL FORWARD CHARACTERISTICS FIG. 1 – FORWARD CURRENT DERATING CURVE 20 INSTANTANEOUS FORWARD CURRENT,(A) 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.5 T J = 25℃ CPULSE WIDTH 300us 1%DUTY CYCLE 1.0 SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD AVERAGE FORWARD CURRENT AMPERES 0.8 0.6 0.4 0.2 0 25 50 75 10 0 125 150 175 AMBIENT TEMPERATURE ( ) INSTANTANEOUS FORWARD VOLTAGE,VOLTS FIG. 3 – MAXIMUM NON-REPETITIVE SURGE CURRENT FIG.6-TYPICAL REVERSE CHARACTERISTICS PEAK FORWARD SURGE CURRENT AMPERES 50 40 30 20 10 0 1 2 4 10 20 40 100 PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD) INSTANTANEOUS REVERSE CURRENT MICROAMPERS 10 4 1.0 0.4 0.1 0.04 TJ = 25℃ 0.01 0 20 40 60 80 100 120 TJ = 100℃ 140 NUMBER OF CYCLES AT 60Hz PERCENT OF RATED PEAK REVERSE VOLTGE,(%) FIG.5 – TYPICAL JUNCTION CAPACITANCE 100 40 CAPACITANCE, (pF) 20 10 TJ = 25℃ f = 1.0 MHz 4 2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ .


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