Document
EM513 thru EM518
®
Pb
Pb Free Plating Product
EM513 thru EM518
1.0 Ampere DO-41 Package High Voltage Silicon Diode
DO-41
Unit: inch(mm)
Features
• • • Low leakage Low forward voltage drop High current capability
.205(5.2) .160(4.1) 1.0(25.4)MIN.
•
Low cost
.034(.86) .028(.71)
Mechanical Data
• • • Case: Molded plastic, DO-41 Mounting Position: Any Terminals: Axial leads, solderable per MIL-STD-202
.107(2.7)
1.0(25.4)MIN.
.080(2.0)
Absolute Maximum Ratings (Ta = 25oC)
Symbols
Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current , .375”(9.5mm) lead length TA =75℃ Peak forward surge current , 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum forward voltage at IF = 1.0A DC TJ = 25oC Maximum leakage current at TA = 25 OC at rated DC blocking voltage at TA = 100OC Typical junction capacitance (Note 1) Typical thermal resistance (Note 2) Operating and storage temperature range VRRM VRMS VDC IFAV EM 513 1600 1120 1600 EM 516 1800 1260 1800 1 30 EM 518 2000 1400 2000
Units
V V V A
IFSM
A
VF IR CJ RthA TJ ,TS
1.1 5 500 15 50 -55 to +150
V µA µA pF
℃/W
℃
Note : 1. Measured at 1MHz and applied reverse voltage of 4.0VDC. 2. Thermal resistance junction to ambient 0.375”(9.5mm) lead length P.C.B. mounted.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
EM513 thru EM518
®
FIG.2-TYPICAL FORWARD CHARACTERISTICS FIG. 1 – FORWARD CURRENT DERATING CURVE 20
INSTANTANEOUS FORWARD CURRENT,(A)
10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.6 0.8 1.0 1.2 1.4 1.5
T J = 25℃ CPULSE WIDTH 300us 1%DUTY CYCLE
1.0
SINGLE PHASE HALF WAVE 60Hz RESISTIVE OR INDUCTIVE LOAD
AVERAGE FORWARD CURRENT AMPERES
0.8
0.6
0.4
0.2 0 25 50 75 10 0 125 150 175
AMBIENT TEMPERATURE ( )
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG. 3 – MAXIMUM NON-REPETITIVE SURGE CURRENT
FIG.6-TYPICAL REVERSE CHARACTERISTICS
PEAK FORWARD SURGE CURRENT AMPERES
50 40 30 20 10 0 1 2 4 10 20 40 100
PULSE WIDTH 8.3ms SINGLE HALF-SINE-WAVE (JEDEC METHOD)
INSTANTANEOUS REVERSE CURRENT MICROAMPERS
10 4 1.0 0.4 0.1 0.04 TJ = 25℃ 0.01 0 20 40 60 80 100 120 TJ = 100℃
140
NUMBER OF CYCLES AT 60Hz
PERCENT OF RATED PEAK REVERSE VOLTGE,(%)
FIG.5 – TYPICAL JUNCTION CAPACITANCE 100
40
CAPACITANCE, (pF)
20 10 TJ = 25℃ f = 1.0 MHz 4
2 1 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS
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© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
.