Document
HF10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
• PG = 20 dB min. at 10 W/30 MHz • IMD3 = -30 dBc max. at 10 W (PEP) • Omnigold™ Metalization System
B
C E
ØC
E B
H I J
D
MAXIMUM RATINGS
IC VCBO VCEO VEBO PDISS TJ T STG θ JC
O O
#8-32 UNC-2A F E
G
4.5 A 36 V 18 V 4.0 V 80 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.2 OC/W
O O O
DIM A B C D E F G H I J MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10593
CHARACTERISTICS
SYMBOL
BV CBO BV CES BV CEO BV EBO ICES hFE Cob GP IMD3 IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 15 V VCE = 5.0 V
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
36 36 18 4.0 5
UNITS
V V
V mA --pF dB -30 dBc
IC = 1.0 A f = 1.0 MHz ICQ = 25 mA f = 30 MHz
10 100 15 18
200
VCB = 12.5 V VCC = 12.5V POUT = 10 W(PEP)
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
.