HF30-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF30-28S is Designed for
PACKAGE STYLE .380 4L STUD
.112...
HF30-28S
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI HF30-28S is Designed for
PACKAGE STYLE .380 4L STUD
.112x45° A
FEATURES:
PG = 20 dB min. at 30 W/30 MHz IMD3 = -30 dBc max. at 30 W (PEP) Omnigold™ Metalization System
B
C E
ØC
E B
H I J
D
MAXIMUM RATINGS
IC VCB VCE VEBO PDISS TJ T STG θ JC
O O
#8-32 UNC-2A F E
G
5.0 A 65 V 35 V 4.0 V 60 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 2.9 OC/W
O O
DIM A B C D E F G H I J MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84 .385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
ORDER CODE: ASI10605
CHARACTERISTICS
SYMBOL
BV CBO BV CES BV CEO BV EBO ICES ICBO hFE COB GP ηC IC = 10 mA IC = 200 mA IC = 200 mA IE = 10 mA VCE = 30 V VCE = 30 V VCE = 5.0 V VCB = 30V
TC = 25 OC
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
65 65 35 4.0 ------------10 1.0 200 65 ---
UNITS
V V V V mA mA --pF dB %
IC = 500 mA f = 1.0 MHz PIN = 7.0 W f = 175 MHz
5.0 --7.6 60
VCE = 28 V POUT = 30 W(PEP)
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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