HF50-12
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power A...
HF50-12
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The HF50-12 is Designed for 12.5 Volt Class AB and Class C Power Amplifier Applications Operating in the 2 to 32 MHz HF Band.
FEATURES INCLUDE:
High Gain, 16 dB Typical @ 30 MHz Emitter Ballasting Withstands Severe Mismatch
MAXIMUM RATINGS
IC VCB VCE VEB PDISS TJ T STG θ JC 10 A 36 V 18 V 4.0 V 175 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 1.0 C/W
O
PACKAGE STYLE .380" 4L FLANGE
1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER
CHARACTERISTICS
SYMBOL
BV CES BV CEO BV EBO ICES hFE Cob GPE η IMD
TC = 25 OC
TEST CONDITIONS
IC = 100 mA IC = 100 mA IE = 10 mA VCE = 15 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V ICQ = 50 mA IC = 5.0 A f = 1.0 MHz
MINIMUM TYPICAL MAXIMUM
36 18 4.0 10 20 200 15 16 55 -30
UNITS
V V V mA --pF dB % dB
POUT = 50 W(PEP) f = 30 MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
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