HFA100MD60C

Previous Datasheet Index Next Data Sheet PD-2.442 HFA100MD60C HEXFRED Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG LUG LUG TERMINAL TERMINAL TERMINAL ANODE 1 CATHODE ANODE 2 VR = 600V VF = 1.4V Qrr * = 780nC BASE (ISOLATED) di(rec)M/dt * = 240A/µs * 125°C Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM TO-244AB (ISOLATED) Absolute Maximum Ratings (per Leg) Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM IAS EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Maximum Single Pulse Avalanche Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 600 83 40 400 2.0 220 180 71 -55 to +150 Units V A µJ W C Thermal - Mechanical Characteristics Parameter RθJC RθCS Wt Junction-to-Case, Single Leg Conducting...