HFA105NH60R

Previous Datasheet Index Next Data Sheet PD-2.443 HFA105NH60R HEXFRED Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters TM Ultrafast, Soft Recovery Diode LUG TERMINAL CATHODE VR = 600V VF = 1.5V a d Qrr * = 1200nC di(rec)M/dt * = 240A/µs * 125°C BASE ANODE Description HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of current, temperature and di/dt simplifies the calculations of losses in the operating conditions. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses. TM HALF-PAK Absolute Maximum Ratings Parameter VR IF @ TC = 25°C IF @ TC = 100°C IFSM IAS EAS PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Cathode-to-Anode Voltage Continuous Forward Current Continuous Forward Current Single Pulse Forward Current Maximum Single Pulse Avalanche Current Non-Repetitive Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Max. 600 147 72 600 2.0 220 379 152 -55 to +150 Units V A µJ W °C Thermal - Mechanical Characteristics Parameter RθJC RθCS Wt Junction-to-Case, Single Case-to-Sink, Flat , Greased Surface Weight Mounting Torque Terminal Torq...