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UNR511E Dataheets PDF



Part Number UNR511E
Manufacturers Panasonic
Logo Panasonic
Description Transistor
Datasheet UNR511E DatasheetUNR511E Datasheet (PDF)

Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit: mm (0.425) For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 0.9±0.1 0.9+0.2 –0.1 (0.65) (0.65) 1.3±0.1 ■ Resistance by Part Number • • • • • • • • • • • •.

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Transistors with built-in Resistor UNR511x Series (UN511x Series) Silicon PNP epitaxial planar type Unit: mm (0.425) For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • S-Mini type package, allowing automatic insertion through the tape/ magazine packing 0.3+0.1 –0.0 3 0.15+0.10 –0.05 1.25±0.10 2.1±0.1 5˚ 1 2 0.2±0.1 0.9±0.1 0.9+0.2 –0.1 (0.65) (0.65) 1.3±0.1 ■ Resistance by Part Number • • • • • • • • • • • • • • • • • • • • Marking symbol UNR5110 (UN5110) 6L UNR5111 (UN5111) 6A UNR5112 (UN5112) 6B UNR5113 (UN5113) 6C UNR5114 (UN5114) 6D UNR5115 (UN5115) 6E UNR5116 (UN5116) 6F UNR5117 (UN5117) 6H UNR5118 (UN5118) 6I UNR5119 (UN5119) 6K UNR511D (UN511D) 6M UNR511E (UN511E) 6N UNR511F (UN511F) 6O UNR511H (UN511H) 6P UNR511L (UN511L) 6Q UNR511M (UN511M) EI UNR511N (UN511N) EW UNR511T (UN511T) EY UNR511V (UN511V) FC UNR511Z (UN511Z) FE (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ 47 kΩ 4.7 kΩ 2.2 kΩ 4.7 kΩ 2.2 kΩ 4.7 kΩ 22 kΩ 2.2 kΩ 4.7 kΩ (R2)  10 kΩ 22 kΩ 47 kΩ 47 kΩ    5.1 kΩ 10 kΩ 10 kΩ 22 kΩ 10 kΩ 10 kΩ 4.7 kΩ 47 kΩ 47 kΩ 47 kΩ 2.2 kΩ 22 kΩ 10˚ 2.0±0.2 1: Base 2: Emitter 3: Collector EIAJ: SC-70 SMini3-G1 Package Internal Connection R1 B R2 E 0 to 0.1 C ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating −50 −50 −100 150 150 −55 to +150 Unit V V mA mW °C °C Note) The part numbers in the parenthesis show conventional part number. Publication date: December 2003 SJH00022BED 1 Free Datasheet http://www.datasheet4u.com/ UNR511x Series ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base UNR5110/5115/5116/5117 Symbol VCBO VCEO ICBO ICEO IEBO Conditions IC = −10 µA, IE = 0 IC = −2 mA, IB = 0 VCB = −50 V, IE = 0 VCE = −50 V, IB = 0 VEB = −6 V, IC = 0 Min −50 −50 − 0.1 − 0.5 − 0.01 − 0.1 − 0.2 − 0.4 − 0.5 −1.0 −1.5 −2.0 hFE VCE = −10 V, IC = −5 mA 6 20 30 35 60 60 80 80 160 VCE(sat) VOH VOL IC = −10 mA, IB = − 0.3 mA IC = −10 mA, IB = −1.5 mA VCC = −5 V, VB = − 0.5 V, RL = 1 kΩ VCC = −5 V, VB = −2.5 V, RL = 1 kΩ VCC = −5 V, VB = −3.5 V, RL = 1 kΩ VCC = −5 V, VB = −10 V, RL = 1 kΩ VCC = −5 V, VB = −6 V, RL = 1 kΩ fT R1 VCB = −10 V, IE = 1 mA, f = 200 MHz VCB = −10 V, IE = 2 mA, f = 200 MHz −30% 80 150 0.51 1.0 2.2 4.7 10 22 47 R1/R2 0.08 0.047 0.1 0.10 0.21 0.12  +30% kΩ MHz −4.9 − 0.2 V V 400 460 − 0.25 V 200 20  Typ Max Unit V V µA µA mA cutoff current UNR5113 (Collector open) UNR5112/5114/511D/ 511E/511M/511N/511T UNR511Z UNR5111 UNR511F/511H UNR5119 UNR5118/511L/511V Forward current UNR511V transfer ratio UNR5118/511L UNR5119/511D/511F/511H UNR5111 UNR5112/511E UNR511Z UNR5113/5114/511M UNR511N/511T UNR5110 */5115 */5116 */5117 * Collector-emitter saturation voltage UNR511V Output voltage high-level Output voltage low-level UNR5113 UNR511D UNR511E Transition frequency UNR5116 Input resistance UNR5118 UNR5119 UNR511H/511M/511V UNR5116/511F/511L 511N/511Z UNR5111/5114/5115 UNR5112/5117/511T UNR5110/5113/511D/511E Resistance ratio UNR511M UNR511N UNR5118/5119 UNR511Z 2 SJH00022BED Free Datasheet http://www.datasheet4u.com/ UNR511x Series ■ Electrical Characteristics (continued) Ta = 25°C ± 3°C Parameter Resistance ratio UNR5114 UNR511H UNR511T UNR511F UNR511V UNR5111/5112/5113/511L UNR511E UNR511D 0.8 1.70 3.7 0.37 Symbol Conditions Min 0.17 0.17 Typ 0.21 0.22 0.47 0.47 1.0 1.0 2.14 4.7 1.2 2.60 5.7 0.57 Max 0.25 0.27 Unit Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 No-rank 160 to 460 Common characteristics chart PT  Ta 250 Total power dissipation PT (mW) 200 150 100 50 0 0 40 80 120 160 Ambient temperature Ta (°C) Characteristics charts of UNR5110 IC  VCE Ta = 25°C IB = −1.0 mA − 0.9 mA −100 − 0.8 mA − 0.7 mA − 0.6 mA − 0.5 mA −80 − 0.4 mA − 0.3 mA −60 − 0.2 mA − 0.1 mA −20 VCE(sat)  IC Collector-emitter saturation voltage VCE(sat) (V) −100 IC / IB = 10 hFE  IC 400 VCE = –10 V −120 −10 Forward current transfer ratio hFE Collector current IC (mA) 300 Ta = 75°C −1 Ta = 75°C 25°C − 0.1 −25°C 200 25°C −25°C −40 100 0 0 −2 −4 −6 −8 −10 −12 − 0.01 −0.1 −1 −10 −100 0 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) SJH00022BED 3 Free Datasheet http://www.datasheet4u.com/ UNR511x Series Cob  VCB Collector output capacitance C (pF) (Common base, input open circuited) ob 6 f = 1 MHz IE = 0 Ta = 25°C −104 IO  VIN VO = −5 V Ta = 25°C −100 VIN  IO VO = − 0.2 V Ta = 25°C 5 .


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