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MSD1010T1

Motorola

PNP Silicon Driver Transistors

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBT1010LT1/D Low Saturation Voltage PNP Silicon Drive...


Motorola

MSD1010T1

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Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBT1010LT1/D Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications. COLLECTOR Low VCE(sat), < 0.1 V at 50 mA Applications LCD Backlight Driver Annunciator Driver General Output Device Driver MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 45 15 5.0 100 BASE EMITTER Unit Vdc Vdc Vdc mAdc MMBT1010LT1 MSD1010T1 Motorola Preferred Devices PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT MMBT1010LT1 CASE 318–07, STYLE 6 SOT-23 MSD1010T1 DEVICE MARKING MMBT1010LT1 = GLP MSD1010T1 = GLP THERMAL CHARACTERISTICS Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 225 1.8 RθJA TJ Tstg 556 150 – 55 ~ + 150 Unit mW mW/°C °C/W °C °C CASE 318D–03, STYLE 1 SC-59 ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturatio...




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