MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
Order this document by MMBT1010LT1/D
Low Saturation Voltage PNP Silicon Drive...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™
Order this document by MMBT1010LT1/D
Low Saturation Voltage
PNP Silicon Driver
Transistors
Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This
PNP Silicon Epitaxial Planar
Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications. COLLECTOR Low VCE(sat), < 0.1 V at 50 mA Applications LCD Backlight Driver Annunciator Driver General Output Device Driver MAXIMUM RATINGS (TA = 25°C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 45 15 5.0 100 BASE EMITTER Unit Vdc Vdc Vdc mAdc
MMBT1010LT1 MSD1010T1
Motorola Preferred Devices
PNP GENERAL PURPOSE DRIVER
TRANSISTORS SURFACE MOUNT
MMBT1010LT1
CASE 318–07, STYLE 6 SOT-23
MSD1010T1
DEVICE MARKING
MMBT1010LT1 = GLP MSD1010T1 = GLP
THERMAL CHARACTERISTICS
Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 225 1.8 RθJA TJ Tstg 556 150 – 55 ~ + 150 Unit mW mW/°C °C/W °C °C
CASE 318D–03, STYLE 1 SC-59
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturatio...