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MMBT1010LT1 Dataheets PDF



Part Number MMBT1010LT1
Manufacturers Motorola
Logo Motorola
Description PNP Silicon Driver Transistors
Datasheet MMBT1010LT1 DatasheetMMBT1010LT1 Datasheet (PDF)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBT1010LT1/D Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications. COLLECTOR • Low VCE(sat), < 0.1 V at 50 mA Applications • L.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ Order this document by MMBT1010LT1/D Low Saturation Voltage PNP Silicon Driver Transistors Part of the GreenLine™ Portfolio of devices with energy–conserving traits. This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in general purpose driver applications. This device is housed in the SOT-23 and SC–59 packages which are designed for low power surface mount applications. COLLECTOR • Low VCE(sat), < 0.1 V at 50 mA Applications • LCD Backlight Driver • Annunciator Driver • General Output Device Driver MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current — Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 45 15 5.0 100 BASE EMITTER Unit Vdc Vdc Vdc mAdc MMBT1010LT1 MSD1010T1 Motorola Preferred Devices PNP GENERAL PURPOSE DRIVER TRANSISTORS SURFACE MOUNT MMBT1010LT1 CASE 318–07, STYLE 6 SOT-23 MSD1010T1 DEVICE MARKING MMBT1010LT1 = GLP MSD1010T1 = GLP THERMAL CHARACTERISTICS Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 225 1.8 RθJA TJ Tstg 556 150 – 55 ~ + 150 Unit mW mW/°C °C/W °C °C CASE 318D–03, STYLE 1 SC-59 ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector-Emitter Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Symbol V(BR)CEO V(BR)EBO ICBO ICEO hFE1(2) VCE(sat)(2) Condition IC = 10 mA, IB = 0 IE = 10 µA, IE = 0 VCB = 20 V, IE = 0 VCE = 10 V, IB = 0 VCE = 5 V, IC = 100 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 100 mA, IB = 10 mA Min 15 5.0 — — 300 — — Max — — 0.1 100 600 0.1 0.1 0.19 1.1 Unit Vdc Vdc µA µA — Vdc VBE(sat)(2) IC = 100 mA, IB = 10 mA — (1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. (2) Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. GreenLine is a trademark of Motorola, Inc. Thermal Clad is a registered trademark of the Berquist Company. Base-Emitter Saturation Voltage Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Vdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1995 1 Free Datasheet http://www.datasheet4u.com/ MMBT1010LT1 MSD1010T1 MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.098-0.118 2.5-3.0 0.094 2.4 0.039 1.0 0.031 0.8 inches mm 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SC–59 SC-59/SOT-23 POWER DISSIPATION The power.


MSD1010T1 MMBT1010LT1 MSD1010T1


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