MBR1045CT

MBR1030CT-MBR1060CT Schottky Barrier Recitifier PRODUCT SUMMARY TO-220 TO-220 Plastic-Encapsulate Transistors FEATURES Scottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Very low forward voltage drop High Surge Capability High Current Capability and Low Forward Voltage Drop For use in low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications 1. ANODE 2. CATHODE 3. ANODE 123 1 Pb-free; RoHS-compliant ELECTRICAL CHARACTERISTICS ( Tamb = 25oC unless otherwise specified ) Characteristic Symbol 2 3 MBR MBR MBR MBR MBR MBR 1030CT 1035CT 1040CT 1045CT 1050CT 1060CT Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage PMS Reverse Voltage Average Rectified Output Current (Note 1) @ TC=105℃ Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load @ t≤ 2.0µs Forward Voltage Drop @ IF=5.0A, TC=125℃ @ IF=5.0A, TC= 25℃ @ IF=10A, TC= 25℃ Peak Reverse Current at Rated DC Blocking Voltage @ TC= 25℃ @ TC=125℃ (JEDEC Method) Repetitive Peak Reverse Surge Current VRRM VRWM VR VR(RMS) IO 21 24.5 28 10 31.5 35 42 V A 30 35 40 45 50 60 V IFSM 125 A IRRM 0.57 VFM 0.70 0.84 IRM Cj Tj, TSTG 1.0 0.70 0.80 0.95 0.1 15 150 -65 to +150 A V mA pF ℃ Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range Notes: 1. Thermal resistance junction to case mounted heat sink. 2. Measured at 1.OMHz and applied rev...