Document
MUR50A20P thru MUR50A60P
SWITCHMODE Power Rectifiers
ULTRAFAST RECTIFIERS 50 AMPERES, 200−600 VOLTS
ADVANTAGES
* High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling
®
TO-247AD-2P
Unit : inch (mm)
1 3
FEATURES
* International standard package JEDEC TO-247AD-2P * Planar passivatd chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
1 4 3
APPLICATIONS
* Antiparallel diode for high frequency switching devices * Antisaturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
Dimensions TO-247AD-2P
Dim. A B C D E F G H J K L M N
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
CUMSUMI SEMICONDUCTOR INTERNATIONAL www.cumsumi.com ®
MAR-14,2006,REV.3
Free Datasheet http://www.datasheet4u.com/
1/3
MUR50A20P thru MUR50A60P
®
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MAXIMUM RATINGS (Per Leg)
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) Symbol VRRM VRWM VR IF(AV) MUR50A20P 200 MUR50A40P 400 MUR50A60P 600 Unit V
50
A
Peak Rectified Forward Current, Per Leg (Rated VR, Square Wave, 20 kHz, TC = 150°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Per Leg Operating Junction and Storage Temperature
IFRM IFSM TJ, Tstg
50 @ TC = 150°C 600 − 65 to +175
50 @ TC =145°C
A A °C
THERMAL CHARACTERISTICS (Per Diode Leg)
Maximum Thermal Resistance, − Junction−to−Case − Junction−to−Ambient °C/W RqJC RqJA 1.5 40
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Maximum Instantaneous Forward Voltage (Note 1) (IF = 50 Amp, TC = 150°C) (IF = 50 Amp, TC = 25°C) Maximum Instantaneous Reverse Current (Note 1) (Rated DC Voltage, TJ = 150°C) (Rated DC Voltage, TJ = 25°C) Maximum Reverse Recovery Time (iF = 1.0 A, di/dt = 50 A/ms) VF 0.95 1.05 iR 5000 60 trr 35 50 5000 60 ns 1.20 1.30 1.5 1.7 mA V
CUMSUMI SEMICONDUCTOR INTERNATIONAL www.cumsumi.com ®
MAR-14,2006,REV.3
Free Datasheet http://www.datasheet4u.com/
2/3
MUR50A20P thru MUR50A60P
Ultra Fast Recovery Diodes
120 A 100 IF 80 60 40 20 0 0.0 0.0 10
TVJ=150°C TVJ=100°C TVJ= 25°C
®
0.8 uC Qr 0.6
TVJ= 100°C VR = 100V
30
TVJ= 100°C A V = 100V R 25
IRM 20
0.4
IF= 15A IF= 30A IF= 50A
IF= 15A IF= 30A IF= 50A
15 10
0.2 5 0 100 A/us 1000 -diF/dt 0 200 400 600 A/us 800 1000 -diF/dt
0.4
0.8 VF
1.2 V
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt
70 ns 60 trr 50 40
TVJ= 100°C VR = 100V
Fig. 3 Typ. peak reverse current IRM versus -diF/dt
6 V 5 VFR 4 3
tfr TVJ= 100°C IF = 50A VFR
1.6 1.4 Kf 1.2 1.0
1.8 us 1.5 tfr 1.2 0.9 0.6 0.3 0.0 A/us 800
30 0.8 0.6 0.4 0 40 80 120 °C 160 TVJ
IRM Qr
20 10 0 0 200 400
IF= 15A IF= 30A IF= 50A
2 1 0
600 A/us 800 -diF/dt
1000
0
200
400
600 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1.2 K/W 1.0 0.8 ZthJC 0.6 0.4 0.2 0.0 0.001
Fig. 5 Typ. recovery time trr versus -diF/dt
Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt
0.01
0.1
1 t
s
10
Fig. 7 Transient thermal impedance junction to case
CUMSUMI SEMICONDUCTOR INTERNATIONAL www.cumsumi.com ®
MAR-14,2006,REV.3
Free Datasheet http://www.datasheet4u.com/
3/3
.