Document
MUR6020PT, MUR6030PT
Ultra Fast Recovery Diodes
Dimensions TO-247AD
A C(TAB) A C A
C
A
Dim. A B C D E F G H
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
A=Anode, C=Cathode, TAB=Cathode VRSM V 200 300 VRRM V 200 300
J K L M N
MUR6020PT MUR6030PT
Symbol IFRMS IFAVM IFRM
Test Conditions TVJ=TVJM TC=115oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine
Maximum Ratings 50 60 375 325 350 290 310 530 510 420 400 -40...+150 150 -40...+150
Unit A
IFSM
TVJ=150oC TVJ=45oC
A
I2t
TVJ=150oC
A2s
TVJ TVJM Tstg Ptot Md Weight TC=25oC Mounting torque
o
C
125 0.8...1.2 6
W Nm g
Free Datasheet http://www.datasheet4u.com/
MUR6020PT, MUR6030PT
Ultra Fast Recovery Diodes
Symbol
Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=30A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM
Characteristic Values typ. max. 200 50 5 0.85 1.10 0.72 4.2 1 0.25
Unit uA uA mA V V m K/W ns A
IR
VF VTO rT RthJC RthCH trr IRM
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC _ VR=100V; IF=30A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C
o
35 4
50 5
FEATURES
* International standard package JEDEC TO-247AD * Planar passivated chips * Very short recovery time * Extremely low switching losses * Low IRM-values * Soft recovery behaviour
APPLICATIONS
* Rectifiers in switch mode power supplies (SMPS) * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders
ADVANTAGES
* High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling
Free Datasheet http://www.datasheet4u.com/
MUR6020PT, MUR6030PT
Ultra Fast Recovery Diodes
120 A 100 IF 80 60 40 20 0 0.0 0.0 10
TVJ=150°C TVJ=100°C TVJ= 25°C
0.8 uC Qr 0.6
TVJ= 100°C VR = 100V
30
TVJ= 100°C A V = 100V R 25
IRM 20
0.4
IF= 15A IF= 35A IF= 70A
IF= 15A IF= 35A IF= 70A
15 10
0.2 5 0 100 A/us 1000 -diF/dt 0 200 400 600 A/us 800 1000 -diF/dt
0.4
0.8 VF
1.2 V
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt
70 ns 60 trr 50 40
TVJ= 100°C VR = 100V
Fig. 3 Typ. peak reverse current IRM versus -diF/dt
6 V 5 VFR 4 3
tfr TVJ= 100°C IF = 35A VFR
1.6 1.4 Kf 1.2 1.0
1.8 us 1.5 tfr 1.2 0.9 0.6 0.3 0.0 A/us 800
30 0.8 0.6 0.4 0 40 80 120 °C 160 TVJ
IRM Qr
20 10 0 0 200 400
IF= 15A IF= 35A IF= 70A
2 1 0
600 A/us 800 -diF/dt
1000
0
200
400
600 diF/dt
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1.2 K/W 1.0 0.8 ZthJC 0.6 0.4 0.2 0.0 0.001
Fig. 5 Typ. r.