P55NF06

55NF06 ® Pb Free Plating Product 55NF06 Pb N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET „ DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. 12 3 TO-220/TO-220F „ FEATURES 12 3 TO-252/DPAK * RDS(ON) = 23mȍ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability „ SYMBOL U55NF06 P55NF06 F55NF06 D55NF06 TO-251/IPAK TO-220 TO-220F TO-252/DPAK „ APPLICATION Auotmobile Convert System Networking DC-DC Power System Power Supply etc.. 2.Drain 1.Gate „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VDSS VGSS 3.Source RATINGS UNIT 60 V ±20 V TC = 25°C 50 A Continuous Drain Current ID TC = 100°C 35 A Pulsed Drain Current (Note 2) IDM 200 A Single Pulsed (Note 3) EAS 480 mJ Avalanche Energy 13 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 7 V/ns TO-220 120 W TO-251 Power Dissipation (TC=25°C) PD W 90 TO-252 136 W Junction Temperature TJ +150 °C Operation and Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damag...