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P5N50C Dataheets PDF



Part Number P5N50C
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 5 Ampere 500 Volt N-Channel MOSFET
Datasheet P5N50C DatasheetP5N50C Datasheet (PDF)

P5N50C ® Pb Free Plating Product P5N50C 5 Ampere 500 Volt N-Channel MOSFET { ̻ Pb Features ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested ඔ 2. Drain BVDSS = 500V ̵ 1. Gate { RDS(ON) = 1.5 ohm ID = 5.0A ̻ ̻ { 3. Source General Description This N-channel enhancement mode field-effect power transistor using Thinki Semiconductor's advanced planar stripe, DMOS technology intended for off-line switch mo.

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P5N50C ® Pb Free Plating Product P5N50C 5 Ampere 500 Volt N-Channel MOSFET { ̻ Pb Features ̰ ̰ ̰ ̰ ̰ RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested ඔ 2. Drain BVDSS = 500V ̵ 1. Gate { RDS(ON) = 1.5 ohm ID = 5.0A ̻ ̻ { 3. Source General Description This N-channel enhancement mode field-effect power transistor using Thinki Semiconductor's advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 package is well suited for half bridge and full bridge resonant topolgy like a electronic ballast . TO-220 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 500 5.0 3.4 21.2 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 390 9.84 4.5 98.4 0.78 - 55 ~ 150 300 Thermal Characteristics Symbol RTJC RTCS RTJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min. - Typ. 0.5 - Max. 1.27 62 Units °C/W °C/W °C/W Page 1/6 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ P5N50C ® Electrical Characteristics Symbol Off Characteristics BVDSS ȟ BVDSS/ ȟ TJ IDSS ( TC = 25 °C unless otherwise noted ) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse Test Conditions VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 500V, VGS = 0V VDS = 400V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Min 500 - Typ 0.47 - Max 1 10 100 -100 Units V V/°C uA uA nA nA IGSS On Characteristics VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS = VGS, ID = 250uA VGS =10 V, ID = 2.65A 2.0 1.2 4.0 1.5 V ˟ Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz VDD =250V, ID =5.0A, RG =25 ˟ ଖ see fig. 13. (Note 4, 5) 608 75 25 pF Dynamic Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =400V, VGS =10V, ID =5.3A ଖ see fig. 12. (Note 4, 5) 16 49 60 49 18.5 4 8 42 108 130 108 23 nC ns - Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr.


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