Document
P5N50C
®
Pb Free Plating Product
P5N50C
5 Ampere 500 Volt N-Channel MOSFET
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Pb
Features
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RDS(on) (Max 1.5 ˟ )@VGS=10V Gate Charge (Typical 18.5nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
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2. Drain
BVDSS = 500V
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1. Gate
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RDS(ON) = 1.5 ohm ID = 5.0A
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3. Source
General Description
This N-channel enhancement mode field-effect power transistor using Thinki Semiconductor's advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 package is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
500 5.0 3.4 21.2
Units
V A A A V mJ mJ V/ns W W/°C °C °C
±30
390 9.84 4.5 98.4 0.78 - 55 ~ 150 300
Thermal Characteristics
Symbol
RTJC RTCS RTJA
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient
Value Min.
-
Typ.
0.5 -
Max.
1.27 62
Units
°C/W °C/W °C/W
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© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/
P5N50C
®
Electrical Characteristics
Symbol Off Characteristics
BVDSS ȟ BVDSS/ ȟ TJ IDSS
( TC = 25 °C unless otherwise noted )
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse
Test Conditions
VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 500V, VGS = 0V VDS = 400V, TC = 125 °C VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V
Min
500 -
Typ
0.47 -
Max
1 10 100 -100
Units
V V/°C uA uA nA nA
IGSS
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS = VGS, ID = 250uA VGS =10 V, ID = 2.65A 2.0 1.2 4.0 1.5 V ˟
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS =0 V, VDS =25V, f = 1MHz VDD =250V, ID =5.0A, RG =25 ˟ ଖ see fig. 13.
(Note 4, 5)
608 75 25
pF
Dynamic Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS =400V, VGS =10V, ID =5.3A ଖ see fig. 12.
(Note 4, 5)
16 49 60 49 18.5 4 8
42 108 130 108 23 nC ns
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Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr.