MJE13002

Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 3.12 89 275 ºC/W ºC/W ºC Rth (j-a) Junction to Ambient in free air Maximum Load Temperature for TL Soldering Purposes 1/8" from Case for 5 Seconds *Pulse Test: Pulse Width=5ms, Duty Cycle<10% ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage **VCEO(sus) IC=10mA, IB=0 MJE13002 MJE13003 VCEV=Rated Value, VBE(off)=1.5V VCEV=Rated Value, VBE(off)=1.5V,Tc=100ºC VEB=9V, IC=0 SYMBOL VCEO(sus) VCEV VEBO IC *ICM IB *IBM IE *IEM PD PD Tj, Tstg MJE13002 300 600 9.0 1.5 3.0 0.75 1.5 2.25 4.5 1.4 11.2 40 320 - 65 to 150 MJE13003 400 700 UNIT V V V A A A A A A W mW/ ºC W mW/ ºC ºC MIN 300 400 TYP MAX UNIT V V Collector Cuttoff Current ICEV 1.0 5.0 1.0 mA mA mA Emitter Cuttoff Current IEBO Continental Device India Limited Data Sheet ...