MJE13009

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ¡¤With TO-220C package ¡¤High voltage ,high speed APPLICATIONS ¡¤Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13009 ¡¤ Absolute maximum ratings(Tc=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM IE IEM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Emitter current Emitter current-Peak Base current Base current-Peak Ta=25¡æ Total power dissipation TC=25¡æ Junction temperature Storage temperature 100 150 -65~150 ¡æ ¡æ CONDITIONS Open emitter Open base Open collector VALUE 700 400 9 12 24 18 36 6 12 2 W UNIT V V V A A A A A A THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT ¡æ/W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Tra...