E13005-250
®
Pb Free Plating Product
E13005-250
MJE Power Transistor
Pb
Silicon NPN Power Transistor
Product speci...
E13005-250
®
Pb Free Plating Product
E13005-250
MJE Power
Transistor
Pb
Silicon
NPN Power
Transistor
Product specification
MJE13005 series
DESCRIPTION Silicon
NPN, high power
transistors in a plastic envelope, primarily for use in high-speed power switching circuits.
1. B 2. C 3. E
Absolute Maximum Ratings ( Ta = 25℃ )
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at
Max. Operating Junction Temperature
l VCBO VCEO VEBO IC IB Ptot Tj Tstg
Value 700 400 9 5.0 2.0 75 150 -55~150
Unit V V V A A W
o
C C
Unit:mm
Storage Temperature
o
Electrical Characteristics ( Ta = 25℃ )
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn Off Time Symbol Test Conditions VCE=700V, IE=0 VEB=6.0V, IC=0 IC=10mA, IB=0 VCE=5V, IC=1.0A Min. — — 400 15 — — 4 2.0 Typ. — — — — — — — 3.0 Max. 10 10 — 30 1.0 1.5 — 4.0 V V MHz us Unit uA uA V
ICBO IEBO VCEO hFE
VCE(sat) IC=4.0A,IB=1.0A VBE(sat) IC=2.0A,IB=0.5A fT tS
VCE=10V, IC=0.5A IB1=-IB2=0.5A,
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