2SA1694 2SA1694
Silicon PNP Epitaxial Planar Transistor
®
Pb
Pb Free Plating Product
Silicon PNP Power Transistors
...
2SA1694 2SA1694
Silicon
PNP Epitaxial Planar
Transistor
®
Pb
Pb Free Plating Product
Silicon
PNP Power
Transistors
2SA1694
DESCRIPTION ·With TO-3PI package ·Complement to type 2SC4467 APPLICATIONS ·Audio and general purpose
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PI) and symbol DESCRIPTION
1
2
3
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -8 -3 UNIT V V V A A
Tc=25℃
80
150 -55~150
W
¡æ ¡æ
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2SA1694
®
Silicon
PNP Power
Transistors
CHARACTERISTICS
Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-3A ;IB=-0.3A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-12V 50 MIN -120
2SA1694
SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT
TYP.
MAX
UNIT V
-1.5 -10 -10 180 300 20
V µA µA
pF MHz
Switching times ton ts tf Turn-on time Storage time Fall time IC=-4A;RL=10B IB1=- IB2=-0.4A VCC=-40...