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2SA1694

Thinki Semiconductor

Silicon PNP Transistor

2SA1694 2SA1694 Silicon PNP Epitaxial Planar Transistor ® Pb Pb Free Plating Product Silicon PNP Power Transistors ...


Thinki Semiconductor

2SA1694

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2SA1694 2SA1694 Silicon PNP Epitaxial Planar Transistor ® Pb Pb Free Plating Product Silicon PNP Power Transistors 2SA1694 DESCRIPTION ·With TO-3PI package ·Complement to type 2SC4467 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PI) and symbol DESCRIPTION 1 2 3 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -6 -8 -3 UNIT V V V A A Tc=25℃ 80 150 -55~150 W ¡æ ¡æ Page 1/4 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ 2SA1694 ® Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-50mA ;IB=0 IC=-3A ;IB=-0.3A VCB=-120V; IE=0 VEB=-6V; IC=0 IC=-3A ; VCE=-4V IE=0 ; VCB=-10V,f=1MHz IC=-0.5A ; VCE=-12V 50 MIN -120 2SA1694 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V -1.5 -10 -10 180 300 20 V µA µA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-4A;RL=10B IB1=- IB2=-0.4A VCC=-40...




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