2SC4467

2SC4467 2SC4467 Silicon NPN Triple Diffused Planar Transistor ® Pb Pb Free Plating Product Silicon NPN Power Transistors 2SC4467 DESCRIPTION ·With TO-3PI package ·Complement to type 2SA1694 APPLICATIONS ·Audio and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PI) and symbol DESCRIPTION 1 2 3 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Open emitter Open base Open collector CONDITIONS VALUE 160 120 6 8 3 UNIT V V V A A Tc=25℃ 80 150 W ¡æ ¡æ -55~150 Page 1/4 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ 2SC4467 ® Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=3A ;IB=0.3A VCB=160V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=4V IE=0 ; VCB=10V,f=1MHz IC=0.5A ; VCE=12V 50 200 20 MIN 120 2SC4467 SYMBOL V(BR)CEO VCEsat ICBO IEBO hFE COB fT TYP. MAX UNIT V 1.5 10 10 180 V µA µA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=4A;RL=10C IB1=- IB2=0.4A VCC=40V 0.13 3.50 0.3...