2SA940

2SA940 ® 2SA940 Pb Free Plating Product Pb PNP Silicon Epitaxial Power Transistor FEATURES z Complements the 2SC2073. 9.90±0.20 φ ± 60 3. 0. 20 4.50±0.20 1.30±0.20 15.70±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 z Vertical Output Applications. 2.80±0.20 z Power Amplifier Applications. 6.50±0.20 APPLICATIONS 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters TO-220C Package Dimension MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO VCEO VEBO IC IB PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25℃ Tc=25℃ Value -150 -150 -5 -1.5 -0.5 1.5 25 -55 to +150 Unit V V V A A W ℃ Junction and Storage Temperature 3.02±0.20 1.27±0.20 1.52±0.20 2.40±0.20 Page 1/3 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ Free Datasheet http://www.datasheet4u.com/ 2SA940 ® ELECTRICAL CHARACTERISTICS Ratings at 25℃ Parameter Collector-base Breakdown Voltage Collector-emitter Breakdown Voltage Emitter-base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-emitter Saturation Voltage Base-emitter Voltage Transition Frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) fT Cob ambient temperature unless otherwise specified. Test conditions IC=-100μA,IE=0 IC=-1mA,...