Document
Fast Switching EmCittoenr DCioondterolled Diode
Feature • 600VVEEmmitCteornCteocnhtrnoollleodgytechnology • Fast recovery • Soft switching • Low reverse recovery charge • Low forward voltage • 175°C operating temperature • Easy paralleling
IDD06E60
Product Summary
VRRM IF VF Tjmax
600 V
6
A
1.5 V
175 °C
Type IDD06E60
Package
Ordering Code Marking Pin 1 PIN 2,4 PIN 3
PG-TO252-3
-
D06E60 NC
C
A
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
PPaararammeteetrer
SymSbymobl ol
RReeppeetittiivteivpeepakearekverersveevrosletavgeoltage
CCoonntintiunoouussfoforwrwaradrcdurcruenrrtent
TTCC==2255°CC TTCC==9900°CC SSuurgrgeenonnornepreetpiteivteitfivorewfaordrwcaurrrdencturrent TC = 25C, tp = 10 ms, sine halfwave MTCax=i2m5u°mC, rtepp=e1t0itimves,fosrinweahrdalcfwurarveent TMC a=x2im5uCm, tprleimpietetditibvyetjf,moarxw, Dar=d0c.5urrent PToCw=e2r5d°Cis,stippalitmioitned by Tjmax, D=0.5 TPCo=w2e5rCdissipation
TTCC==2950°CC OTpCe=r9a0ti°nCg junction temperature SOtopreagraettienmgpaenradtusrteorage temperature SSooldldereinrigntgemtepmerpaeturraeture 1r.e6fmlomw(s0.o0l6d3eirnin.)gfr,oMmScLas3e for 10 s
VRRVMR R M IF
IF
IFSMI F S M
IFRMI F R M
PtotPt o t
Tj Tj , TTssttgg TS TS
RReevv. .22.4.2
Page 1
VaVlualeue 606000
141.74.7 1010 2929
2222
UUnint it VV
A A
A
A
46.8
WW
462.86.6
-2406….6+175
-55-5..5.+...1+71550
°C°C
262060
°C
22001037-1-02-40-524
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 1)
IDD06E60
Symbol
Values
Unit
min. typ. max.
RthJC
-
-
3.2 K/W
RthJA
-
-
75
-
-
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Static Characteristics
Reverse leakage current
VR=600V, Tj=25°C VR=600V, Tj=150°C
IR
-
-
50
-
- 500
Forward voltage drop
IF=6A, Tj=25°C IF=6A, Tj=150°C
VF
-
1.5
2
-
1.5
-
Unit µA V
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
RReevv. .22.4.2
Page 2
22001037-1-20-405-24
IDD06E60
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Dynamic Characteristics
Reverse recovery time
VR=400V, IF=6A, di/dt=550A/µs, Tj=25°C VR=400V, IF=6A, di/dt=550A/µs , Tj=125°C VR=400V, IF=6A, di/dt=550A/µs , Tj=150°C
trr
-
70
-
- 100 -
- 105 -
Peak reverse current
VR=400V, IF=6A, di/dt=550A/µs, Tj=25°C VR=400V, IF=6A, di/dt=550A/µs, Tj=125°C VR=400V, IF=6A, di/dt=550A/µs, Tj=150°C
Irrm
-
6.5
-
-
7.4
-
-
7.9
-
Reverse recovery charge
VR=400V, IF=6A, di/dt=550A/µs, Tj=25°C VR=400V, IF=6A, di/dt=550A/µs, Tj=125°C VR=400V, IF=6A, di/dt=550A/µs, Tj=150°C
Qrr - 240 - 360 - 400 -
Reverse recovery softness factor
S
VR=400V, IF=6A, diF/dt=550A/µs, Tj=25°C VR=400V, IF=6A, diF/dt=550A/µs, Tj=125°C VR=400V, IF=6A, diF/dt=550A/µs, Tj=150°C
-
4
-
-
4.8
-
-
4.9
-
Unit ns A nC
RReevv..22..42
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22001037-1-02-40-524
Ptot
1 Power dissipation Ptot = f (TC) parameter: Tj ≤ 175°C
50
W
40
35
30
25
20
15
10
5
0
25
50
75 100 125 °C 175
TC
3 Typ. diode forward current IF = f (VF)
IF
2 Diode forward current IF = f(TC) parameter: Tj ≤ 175°C
16
A
IDD06E60
12
10
8
6
4
2
0
25
50
75 100 125 °C 175
TC
4 Typ. diode forward voltage VF = f (Tj)
IF
18
A
14 12 10
8 6 4 2 0
0
RReevv. .22.4.2
-55°C 25°C 100°C 150°C
0.5
1
2
V
12A
1.8
1.7
VF
1.6
1.5
6A
1.4
1.3 3A
1.2
1.1
1.5
V
2.5
VF
1
-60
-20
20
60
100 °C 160
Tj
Page 4
22001037-1-02-40-524
IDD06E60
5 Typ. reverse recovery time trr = f (diF/dt) parameter: VR = 400V, Tj = 125°C
300
ns
12A
6A
200
3A
6 Typ. reverse recovery charge
Qrr=f(diF/dt) parameter: VR = 400V, Tj = 125 °C
550
nC
12A
500 475 450
Qrr
trr
425
150
400
375
6A
100
350
325
50
300
3A
275
0
200 300 400 500 600 A/µs 800 diF/dt
250
200 300 400 500 600 A/µs 800 diF/dt
7 Typ. reverse recovery current Irr = f (diF/dt) parameter: VR = 400V, Tj = 125°C
11
8 Typ. reverse recovery softness factor S = f(diF/dt) parameter: VR = 400V, Tj = 125°C
11
A
Irr
9
12A
6A
3A
8
7
6
S
9
12A
8
6A
3A
7
6
5
4
5
3
2
4 1
3
200 300 400 500 600 A/µs 800 diF/dt
0
200 300 400 500 600 700 800 A/µs 1000 diF/dt
RReevv. 2.2.4.2
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201037--1024-0-524
ZthJC
9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T
10 1 IDD06E60 K/W
10 0
10 -1
10 -2
10 -3
single pulse
D = 0.50 0.20 0.10 0.05 0.02 0.01
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
IDD06E60
RReevv. .22.4.2
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2001037-1-02-40-524
PG -TO252 -3
IDD06E60
RReevv. 2.2.4.2
Page 7
22001037-1-20-40-524
IDD06E60
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Tec.