TSM12N65

TSM12N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 650 RDS(on)(Ω) 0.8 @ VGS =10V ID (A) 6 General Description The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Features ● ● ● ● Low RDS(ON) 0.68Ω (Typ.) Low gate charge typical @ 41nC (Typ.) Low Crss typical @ 14.6pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM12N65CI C0 Package ITO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 2 Single Pulse Avalanche Energy (Note 1) Avalanche Current (Repetitive) (Note 1) Total Power Dissipation @ TC = 25 C Operating Junction Temperature Storage Temperature Range Note: Limited by maximum junction temperature o Symbol VDS VGS Tc = 25ºC Tc = 100ºC ID IDM EAS IAS EAR IAR PTOT TJ TSTG Limit 650 ±30 12 4.5 48 273 12 7.6 12 45 150 -55 to +150 Unit V V A A A mJ A mJ A W ºC o C Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t ≤ 10sec Sy...