TSHF6410

Please Note PCN-OPT-1275-2023 Valid From 01-Dec-2023 (click here) www.vishay.com TSHF6410 Vishay Semiconductors High Speed Infrared Emitting Diode, 890 nm, Surface Emitter Technology 94 8389 DESCRIPTION TSHF6410 is an infrared, 890 nm emitting diode based on surface emitter chip technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Peak wavelength: λp = 890 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 27° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Infrared high speed remote control and free air data transmission systems with high modulation frequencies or high data transmission rate requirements Transmission systems according to IrDA requirements and for carrier frequency based systems (e.g. ASK/FSK coded, 450 kHz or 1.3 MHz) PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (°) TSHF6410 62 ± 27 Note Test conditions see table “Basic Characteristics” λP (nm) 890 tr (ns) 10 ORDERING INFORMATION ORDERING CODE TSHF6410 Note MOQ: minimum order quantity PACKAGING Bulk REMARKS MOQ: 4000 pcs, 4000 pcs/bulk PACKAGE FORM T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION ...