2N5038 TRANSISTOR Datasheet

2N5038 Datasheet, PDF, Equivalent


Part Number

2N5038

Description

(2N5038 / 2N5039) NPN HIGH POWER SILICON TRANSISTOR

Manufacture

Microsemi

Total Page 2 Pages
Datasheet
Download 2N5038 Datasheet


2N5038
TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/439
Devices
2N5038
2N5039
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation @ TC = +250C (1)
VCEO
VCBO
VEBO
IB
IC
PT
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Top, Tstg
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
RθJC
1) Derate linearly 800 mW/0C for TC > +250C
2N5038 2N5039
90 75
150 125
7.0
5.0
20
140
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
0C
Max.
1.25
Unit
0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc
2N5038
2N5039
V(BR)CEO
Emitter-Base Breakdown Voltage
IE = 25 mAdc
Collector-Base Cutoff Current
V(BR)EBO
VCE = 150 Vdc
2N5038
ICBO
VCE = 125 Vdc
Collector-Base Cutoff Current
2N5039
VCE = 70 Vdc
2N5038
ICEO
VCE = 55 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc
Collector-Emitter Cutoff Current
2N5039
IEBO
VBE = -1.5 Vdc VCE = 100 Vdc
2N5038
ICEX
VBE = -1.5 Vdc VCE = 85 Vdc
2N5039
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Min.
90
75
7.0
TO-3*
(TO-204AA)
*See appendix A for
package outline
Max.
Unit
Vdc
Vdc
1.0 µAdc
1.0
1.0 µAdc
1.0
1.0 µAdc
5.0 µAdc
5.0
120101
Page 1 of 2
Free Datasheet http://www.datasheet4u.com/

2N5038
2N5038, 2N5039, JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (2)
Forward-Current Transfer Ratio
IC = 0.5 Adc, VCE = 5.0 Vdc
2N5038
2N5039
IC = 2.0 Adc, VCE = 5.0 Vdc
2N5038
2N5039
IC = 12 Adc, VCE = 5.0 Vdc
2N5038
IC = 10 Adc, VCE = 5.0 Vdc
Collector-Emitter Saturation Voltage
2N5039
IC = 12 Adc, IB = 1.2 Adc
2N5038
IC = 10 Adc, IB = 1.0 Adc
2N5039
IC = 20 Adc, IB = 5.0 Adc
Base-Emitter Saturation Voltage
Both
IC = 20 Adc, IB = 5.0 Adc
Base-Emitter Voltage
IC = 12 Adc, VCE = 5.0 Vdc
2N5038
IC = 10 Adc, VCE = 5.0 Vdc
2N5039
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
IC = 2.0 Adc, VCE = 10 Vdc, f = 5.0 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz f 1.0 MHz
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1= 1.2 Adc
VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1= 1.0 Adc
Turn-Off Time
2N5038
2N5039
VCC = 30 ± 2 Vdc; IC = 12 Adc; IB1 = -IB2 = 1.2 Adc
VCC = 30 ± 2 Vdc; IC = 10 Adc; IB1 = -IB2 = 1.0 Adc
2N5038
2N5039
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 28 Vdc, IC = 5.0 Adc
Test 2
VCE = 45 Vdc, IC = 0.9 Adc
Test 3
VCE = 7.0 Vdc, IC = 20 Adc
Test 4
VCE = 90 Vdc, IC = 0.23 Adc
Test 4
2N5038
VCE = 75 Vdc, IC = 0.32 Adc
2N5039
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle 2.0%.
Symbol
hFE
VCE(sat)
VBE(sat)
VBE
hFE
Cobo
ton
toff
Min. Max. Unit
50
30
50 200
30 150
15
15
1.0
1.0 Vdc
2.5
3.3 Vdc
1.8 Vdc
1.8
12 48
500
pF
0.5 µs
2.0 µs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
Free Datasheet http://www.datasheet4u.com/


Features TECHNICAL DATA NPN HIGH POWER SILICON TR ANSISTOR Qualified per MIL-PRF-19500/43 9 Devices 2N5038 2N5039 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Rati ngs Collector-Emitter Voltage Collector -Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ TC = +250C (1) Operating & Storage Temperature Range Symbol VCE O VCBO VEBO IB IC PT Top, Tstg 2N5038 90 150 2N5039 75 125 Units Vdc Vdc Vd c Adc Adc W 0 7.0 5.0 20 140 -65 to +2 00 Max. 1.25 C THERMAL CHARACTERISTIC S Characteristics Symbol Thermal Resist ance, Junction-to-Case RθJC 1) Derate linearly 800 mW/0C for TC > +250C 0 Un it C/W TO-3* (TO-204AA) *See appendix A for package outline ELECTRICAL CHAR ACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max . Unit OFF CHARACTERISTICS Collector-E mitter Breakdown Voltage IC = 200 mAdc Emitter-Base Breakdown Voltage IE = 25 mAdc Collector-Base Cutoff Current VCE = 150 Vdc VCE = 125 Vdc Collector-Base Cutoff Current VCE = 70 V.
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