(BAV19W-G - BAV21W-G) High Voltage Fast Switching Diode
Small Signal Product
CREAT BY ART
BAV19W-G/BAV20W-G/BAV21W-G
Taiwan Semiconductor
High Voltage Fast Switching Diode
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Description
Small Signal Product
CREAT BY ART
BAV19W-G/BAV20W-G/BAV21W-G
Taiwan Semiconductor
High Voltage Fast Switching Diode
FEATURES
- Fast switching device(trr<50ns) - Surface mount device type - Moisture sensitivity level 1 - Low reverse leakage - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight: 10.5 ± 0.5 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)
PARAMETER
VALUE
SYMBOL
UNIT
BAV19W-G BAV20W-G BAV21W-G
Reverse voltage Peak reverse voltage Power dissipation Average rectified output current Repetitive peak forward current
VR 100 150 200 V VRM 120 200 250 V PD 500 mW IO 200 mA IFM 400 mA
Non-repetitive peak forward surge current
@ tp=1.0ms; TA=25℃
IFSM
2.5 A
Thermal Resistance (Junction to Ambient) Junction and Storage temperature range
RθJA TJ , TSTG
250 -65 to +150
oC/W oC
PARAMETER
BAV19W-G
Reverse voltage
BAV20W-G BAV21W-G
IR=100μA
BAV19W-G VR=100V
Reverse leakage current
BAV20W-G VR=150V
BAV21W-G VR=200V
Forward voltage
IF = 100 mA IF = 200 mA
Junction capacitance
VR = 0 , f = 1.0 MHz
Reverse Recovery Time
(Note)
Note: Test condition: IF= IR= 30mA , RL=100Ω , IRR=3mA
SYM...
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