BAV19W-G

Small Signal Product CREAT BY ART BAV19W-G/BAV20W-G/BAV21W-G Taiwan Semiconductor High Voltage Fast Switching Diode FEATURES - Fast switching device(trr<50ns) - Surface mount device type - Moisture sensitivity level 1 - Low reverse leakage - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code SOD-123 MECHANICAL DATA - Case: Bend lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260°C/10s - Polarity: Indicated by cathode band - Weight: 10.5 ± 0.5 mg MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted) PARAMETER VALUE SYMBOL UNIT BAV19W-G BAV20W-G BAV21W-G Reverse voltage Peak reverse voltage Power dissipation Average rectified output current Repetitive peak forward current VR 100 150 200 V VRM 120 200 250 V PD 500 mW IO 200 mA IFM 400 mA Non-repetitive peak forward surge current @ tp=1.0ms; TA=25℃ IFSM 2.5 A Thermal Resistance (Junction to Ambient) Junction and Storage temperature range RθJA TJ , TSTG 250 -65 to +150 oC/W oC PARAMETER BAV19W-G Reverse voltage BAV20W-G BAV21W-G IR=100μA BAV19W-G VR=100V Reverse leakage current BAV20W-G VR=150V BAV21W-G VR=200V Forward voltage IF = 100 mA IF = 200 mA Junction capacitance VR = 0 , f = 1.0 MHz Reverse Recovery Time (Note) Note: Test condition: IF= IR= 30mA , RL=100Ω , IRR=3mA SYM...