MDS3604

MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ MDS3604 Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ General Description The MDS3604 uses advanced MagnaChip’s MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features VDS = -30V ID = -11A @VGS = -10V RDS(ON) < 10.0mΩ @VGS = -20V < 12.1mΩ @VGS = -10V < 18.3mΩ @VGS = -5V Applications Load Switch General purpose applications Smart Module for Note PC Battery 6(D) 7(D) 8(D) 5(D) D 2(S) 1(S) 4(G) 3(S) G S Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range (Note 2) (Note 1) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating -30 ±25 -11 -44 2.5 84.5 -55~150 Unit V V A A W mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RθJA RθJC Rating 50 25 Unit o C/W May. 2011 Version 1.1 1 MagnaChip Semiconductor Ltd. Free Datasheet http://www.datasheet4u.com/ MDS3604– Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ Ordering Information Part Number MDS3604URH Temp. Range -55~150 C o Package SOIC-8 Packing Tape & Reel Quantity 3000 units RoHS Status Halogen Free Electrical Characteristics...