IRFB3607PBF

PD - 97308C Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G IRFB3607PbF IRFS3607PbF IRFSL3607PbF HEXFET® Power MOSFET D Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability S VDSS RDS(on) typ. max. ID D 75V 7.34m: 9.0m: 80A D D G D S G S G D S TO-220AB IRFB3607PbF D2Pak IRFS3607PbF TO-262 IRFSL3607PbF G D S Gate Drain Source Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Max. d ™ 56™ 80 310 140 Units A W W/°C V °C 0.96 ± 20 -55 to + 175 300 10lb in (1.1N m) 120 46 14 x x Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche Current Ù e mJ A mJ Repetitive Avalanche Energy g Typ. ––– 0.50 ––– ––– Thermal Resistance Symbol R JC R CS R JA R JA Junction-to-Case k Parameter Max. 1.045 ––– 62 40 Units °C/W Case-to-Sink, Flat Greased Surface, TO-220 Junction-to-Ambient, TO-220 j Junction-to-Ambient (PCB Mo...