STL6N2VH5

STL6N2VH5 N-channel 20 V, 0.025 Ω typ., 6 A STripFET™ V Power MOSFET in PowerFLAT™ 2x2 package Datasheet − preliminary data Features Order code VDSS STL6N2VH5 20 V ■ ■ ■ ■ ■ ■ RDS(on) max. ID PTOT 1 2 3 0.03 Ω (VGS=4.5 V) 6 A 2.4 W 0.04 Ω (VGS=2.5 V) 1 2 3 6 5 4 Very low switching gate charge Very low thermal resistance Conduction losses reduced Switching losses reduced 2.5 V gate drive Very low threshold device PowerFLAT™ 2x2 Applications ■ Figure 1. Internal schematic diagram 1(D) 2(D) 3(G) Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. 6(D) D S 5(D) 4(S) AM11269v1 Table 1. Device summary Marking STD1 Package PowerFLAT™ 2x2 Packaging Tape and reel Order code STL6N2VH5 January 2013 Doc ID 023150 Rev 2 1/12 www.st.com 12 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Free Datasheet http://www.datasheet4u.com/ Contents STL6N2VH5 Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuits .............................................. 6 Package mechanical data . ....