STL8N10LF3

STL8N10LF3 N-channel 100 V, 25 mΩ typ., 7.8 A STripFET™ III Power MOSFET in a PowerFLAT™ 5x6 package Datasheet — production data Features Order code STL8N10LF3 VDS 100 V RDS(on) max 35 mΩ ID 7.8 A (1) 1. The value is rated according to Rthj-pcb ■ ■ ■ Logic level VGS(th) 175 °C maximum junction temperature 100% avalanche rated 1 2 3 4 PowerFLAT™ 5x6 Applications ■ ■ Switching applications Automotive Figure 1. Internal schematic diagram Description This device is an N-channel enhancement mode Power MOSFET produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize onresistance and gate charge to provide superior switching performance. $ ' 3 !-V Table 1. Device summary Marking 8N10LF3 Package PowerFLAT™ 5x6 Packaging Tape and reel Order code STL8N10LF3 January 2013 This is information on a product in full production. Doc ID 023977 Rev 1 1/13 www.st.com 13 Free Datasheet http://www.datasheet4u.com/ Contents STL8N10LF3 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 4 5 Test circuits .............................................. 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revisio...