AO3415

AO3415 20V P-Channel MOSFET General Description The AO3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS= -4.5V) RDS(ON) (at VGS= -2.5V) RDS(ON) (at VGS= -1.8V) ESD protected -20V -4A < 41mΩ < 53mΩ < 65mΩ SOT23 Top View Bottom View D D G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum -20 ±8 -4 -3.5 -30 1.5 1 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 65 85 43 Max 80 100 52 Units ° C/W ° C/W ° C/W Rev 7: Sep 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO3415 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-20V, VGS=0V C TJ=55° VDS=0V, VGS= ±8V VDS=VGS, ID=-250µΑ VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-4A TJ=125° C RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V, ID=-4A VGS=-1.8V, ID=-2A VGS=-1.5V, ID=-1A gFS VSD IS Forward Transconductance Diode Forward Voltage V...