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AO3416 Dataheets PDF



Part Number AO3416
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description 20V N-Channel MOSFET
Datasheet AO3416 DatasheetAO3416 Datasheet (PDF)

AO3416 20V N-Channel MOSFET General Description The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS = 2.5V) RDS(ON) (at VGS = 1.8V) 20V 6.5A < 22mΩ < 26mΩ < 34mΩ ESD protected SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum.

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AO3416 20V N-Channel MOSFET General Description The AO3416 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS = 2.5V) RDS(ON) (at VGS = 1.8V) 20V 6.5A < 22mΩ < 26mΩ < 34mΩ ESD protected SOT23 Top View Bottom View D D D G S G S G S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation B C Maximum 20 ±8 6.5 5.2 30 1.4 0.9 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 70 100 63 Max 90 125 80 Units ° C/W ° C/W ° C/W Rev 5: July 2010 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO3416 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=20V, VGS=0V C TJ=55° VDS=0V, VGS= ±8V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, ID=6.5A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=2.5V, ID=5.5A VGS=1.8V, ID=5A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=6.5A IS=1A,VGS=0V 0.4 30 16 22 18 21 50 0.62 1 2 1295 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 160 87 1.8 10 VGS=4.5V, VDS=10V, ID=6.5A 4.2 2.6 280 VGS=4.5V, VDS=10V, RL=1.54Ω, RGEN=3Ω IF=6.5A, dI/dt=100A/µs 328 3.76 2.24 31 6.8 41 1650 22 30 26 34 0.7 Min 20 1 5 ±10 1.1 Typ Max Units V µA µA V A mΩ mΩ mΩ S V A pF pF pF KΩ nC nC nC ns ns us us ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: July 2010 www.aosmd.com Page 2 of 5 Free Datasheet http://www.datasheet4u.com/ AO3416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 25 20 ID (A) 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 Normalized On-Resistance 1.6 VGS=2.5V ID=5.5A 1.4 VGS=1.8V ID=5A VGS=1.5V 2.5V 3.1V 4.5V 15 ID(A) 1.8V 25 VDS=5V 20 10 125°C 25°C 5 0 0 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 25 RDS(ON) (mΩ ) VGS=1.8V 20 VGS=2.5V 15 VGS=4.5V 1.2 1 17 5 2 VGS=4.5V 10 ID=6.5A 10 0 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 4 0.8 0 25 50 75 100 125 150 175 0 Temperature (° C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 60 ID=6.5A 50 RDS(ON) (mΩ ) 1.0E+01 1.0E+00 40 1.0E-01 IS (A) 40 125°C 30 1.0E-02 1.0E-03 125°C 25°C 20 25°C 10 0 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 2 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Rev 5: July 2010 www.aosmd.com Page 3 of 5 Free Datasheet http://www.datasheet4u.com/ AO3416 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 VDS=10V ID=6.5A 4 Ca.


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