30V N-Channel MOSFET
AO3418
30V N-Channel MOSFET
General Description
The AO3418 uses advanced trench technology to provide excellent RDS(ON)...
Description
AO3418
30V N-Channel MOSFET
General Description
The AO3418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 30V 3.8A < 55mΩ < 65mΩ < 85mΩ
SOT23 Top View Bottom View
D
D
D
S G S
G
G S
Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation
B C
Maximum 30 ±12 3.8 3.1 15 1.4 0.9 -55 to 150
Units V V A
VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG
W ° C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 70 100 63
Max 90 125 80
Units ° C/W ° C/W ° C/W
Rev 8: Jan. 2011
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Free Datasheet http://www.datasheet4u.com/
AO3418
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=3.8A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=4.5V, ID=3.5A VGS=2.5V, ID=1A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=5V, ID=3.8A IS=1A,VGS=0V 0...
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