N-Channel 20-V (D-S) MOSFET
Freescale
AO3418/MC3418
N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impeda...
Description
Freescale
AO3418/MC3418
N-Channel 20-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY rDS(on) (mΩ) 76 @ VGS = 4.5V 103 @ VGS = 2.5V
VDS (V) 20
ID(A) 3.4 3.0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 TA=25°C 3.4 ID Continuous Drain Current a TA=70°C 2.7 IDM Pulsed Drain Current b 10 a I 1.6 Continuous Source Current (Diode Conduction) S T =25°C 1.3 A PD Power Dissipation a TA=70°C 0.8 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range
Units V
A A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State
Symbol Maximum 100 RθJA 166
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1
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Freescale Electrical Characteristics
Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(th) IGS...
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