MC3419

Freescale P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOT-23 saves board space Fast switching speed High performance trench technology AO3419/ MC3419 PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.100 @ VGS = -4.5V -20 0.160 @ VGS = -2.5V 0.290 @ VGS = -1.8V ID (A) -2.9 -2.3 -1.7 G D S ABSOLUTE MAXIMUM RATINGS (T A = 25 C UNLESS OTHERWISE NOTED) Parame te r Symbol Maximum Units Drain-Source Voltage -20 VDS V VGS Gate-Source Voltage ± 12 Continuous Drain Current Pulsed Drain Current b a a o TA=25 C TA=70 C o o ID IDM IS -2.9 -2.4 -10 ± 1.6 1.25 0.8 A W o A Continuous Source Current (Diode Conduction) Power Dissipation a TA=25 C TA=70 C o o PD TJ, Tstg Operating Junction and Storage Temperature Range -55 to 150 C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Symbol Maximum Units RΤΗ JA 100 166 o t <= 5 sec Steady-State C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ Freescale AO3419/ MC341...