AO4453

AO4453 12V P-Channel MOSFET General Description The AO4453 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-3.3V) RDS(ON) (at VGS =-2.5V) RDS(ON) (at VGS =-1.8V) RDS(ON) (at VGS =-1.5V) 100% UIS Tested 100% Rg Tested -12V -9A < 19mΩ < 22mΩ < 26mΩ < 36mΩ < 50mΩ SOIC-8 Top View D D D D G G S S S Bottom View D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C C TA=25° Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM IAS EAS PD TJ, TSTG Maximum -12 ±8 -9 -7 -55 20 20 2.5 1.6 -55 to 150 Units V V A A mJ W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 42 70 20 Max 50 85 30 Units ° C/W ° C/W ° C/W Rev 0: Oct. 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AO4453 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-12V, VGS=0V C TJ=55° VDS=0V, VGS=±8V VDS=VGS, ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-9A TJ=125° C RDS(ON) Static ...