P-Channel 30-V (D-S) MOSFET
Freescale
AO4459 / MC4459
P-Channel 30-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impe...
Description
Freescale
AO4459 / MC4459
P-Channel 30-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
PRODUCT SUMMARY rDS(on) (mΩ) 49 @ VGS = -10V 75 @ VGS = -4.5V
VDS (V) -30
ID(A) -6.5 -5.3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Limit VDS Drain-Source Voltage -30 VGS Gate-Source Voltage ±20 TA=25°C -6.5 ID Continuous Drain Current a TA=70°C -5.5 IDM Pulsed Drain Current b -30 a I -4 Continuous Source Current (Diode Conduction) S T =25°C 3.1 A PD Power Dissipation a TA=70°C 2.2 TJ, Tstg -55 to 150 Operating Junction and Storage Temperature Range
Units V
A A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter t <= 10 sec Steady State
Symbol Maximum 40 RθJA 80
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature
1
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Freescale Electrical Characteristics
Parameter Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance a Diode Forward Voltage a Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGS(...
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