AO4576

AO4576 30V N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS ( α MOS LV) technology Very Low RDS(on) at 4.5V GS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Features VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 20A < 5.8mΩ < 9.8mΩ D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C VDS Spike Power Dissipation B 100ns TA=25°C TA=100°C TA=25°C TA=100°C VGS ID IDM IAS EAS VSPIKE PD TJ, TSTG Maximum 30 ±20 20 12 144 25 31 36 3.1 1.2 -55 to 150 Units V V A A mJ V W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units °C/W °C/W °C/W 1/5 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ AO4576 30V N-Channel AlphaMOS Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55°C VDS=0V, VGS= ±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125°C 1.4 1.8 4.7 6.2 7.7 91 0.7 1 4 1037 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=...