AO4578

NTQtu5[PgPQlSł www.whxpcb.com AO4578 30V N-Channel MOSFET General Description Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(ON) at 4.5V VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 20A < 5.7mΩ < 9mΩ Application DC/DC Converters in Computing, Servers, and POL Isolated DC/DC Converters in Telecom and Industrial SOIC-8 Top View D D D D 100% UIS Tested 100% Rg Tested Bottom View D G G S S S S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Maximum 30 ±20 Units V V Continuous Drain Current Pulsed Drain Current C Avalanche Current C TA=25° C TA=70° C ID IDM IAS EAS VSPIKE PD TJ, TSTG 20 15 120 40 8 36 3.1 2 -55 to 150 A mJ V W ° C A Avalanche energy L=0.01mH C VDS Spike Power Dissipation B 100ns TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev.1.0: August 2013 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AO4578 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=250µA VGS=10V,...