30V N-Channel MOSFET
AO4588
30V N-Channel MOSFET
General Description
The AO4588 combines advanced trench MOSFET technology with a low resist...
Description
AO4588
30V N-Channel MOSFET
General Description
The AO4588 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R DS(ON). This device is ideal for load switch and battery protection applications.
Features
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 20A < 4.8mΩ < 6.2mΩ
D
G
S
C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B C TA=70° Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead C TA=25° C TA=70° VGS ID IDM IAS, IAR EAS, EAR PD TJ, TSTG
Maximum 30 ±20 20 15.5 140 45 101 3.1 2 -55 to 150
Units V V A A mJ W ° C
Symbol
t ≤ 10s Steady-State Steady-State
RθJA RθJL
Typ 31 59 16
Max 40 75 24
Units ° C/W ° C/W ° C/W
1/6
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AO4588
30V N-Channel MOSFET
Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±16V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.3 140 3.95 6 4.9 85 0.7 1 4.5 1950 VGS=0V,...
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