AO4588

AO4588 30V N-Channel MOSFET General Description The AO4588 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) 30V 20A < 4.8mΩ < 6.2mΩ ESD Protected 100% UIS Tested 100% Rg Tested SOIC-8 Top View D D D D G G S S S S Bottom View D Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy L=0.1mH C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C C TA=70° VGS ID IDM IAS, IAR EAS, EAR PD TJ, TSTG Maximum 30 ±20 20 15.5 140 45 101 3.1 2 -55 to 150 Units V V A A mJ W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 59 16 Max 40 75 24 Units ° C/W ° C/W ° C/W Rev 0: June 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AO4588 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±16V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance Diode Forw...